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參數(shù)資料
| 型號(hào)： | INT100 |
| 廠商： | Power Integrations, Inc. |
| 英文描述： | Low-Side and High-side Drive with Simultaneous Conduction Lockout |
| 中文描述： | 低邊和高側(cè)驅(qū)動(dòng)器同時(shí)傳導(dǎo)鎖定 |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 94K |
| 代理商： | INT100 |
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INT100
3
Pin Functional Description
Pin 1:
V
supplies power to the logic, high-
side interface, and low-side driver.
Pin 2:
Active-low logic level input
controls the high-side driver output.
HSIN
Pin 3:
Active-high logic level input
LS IN
controls the low-side driver output.
Pin 4, 5:
COM
connection is used as the analog
reference point for the circuit.
Pin 7:
LS RTN
is the power reference point for
the low-side circuitry, and should be
connected to the source of the low-side
MOSFET and to the COM pin.
Pin 8:
LS OUT
is the driver output which
controls the low-side MOSFET.
Pin 11:
HS OUT
is the driver output which
controls the high-side MOSFET.
Pin 12,13,14:
HS RTN
is the power reference point
for the high-side circuitry, and should be
connected to the source of the high-side
MOSFET.
Pin 15:
V
supplies power to the high-side
control logic and output driver. This is
normally connected to a high-side
referenced bootstrap circuit or can be
supplied from a separate floating power
supply.
INT100 Functional Description
5 V Regulators
Both low-side and high-side driver
circuits incorporate a 5 V linear regulator
circuit. The low-side regulator provides
the supply voltage for the control logic
and high-voltage level shift circuit. This
allows
HSIN
and LS IN to be directly
compatible with 5 V CMOS logic
without the need of an external 5 V
supply. The high-side regulator provides
the supply voltage for the noise rejection
circuitry and high-side control logic.
Undervoltage Lockout
The undervoltage lockout circuit for the
low-side driver disables both the LS
OUT and HS OUT pins whenever the
V
power supply falls below typically
9.0 V, and maintains this condition until
the V
power supply rises above
typically 9.35 V. This guarantees that
both MOSFETs will remain off during
power-up or fault conditions.
The undervoltage lockout circuit for the
high-side driver disables the HS OUT
pin whenever the V
power supply
falls below typically 9.0 V, and maintains
this condition until the V
power
supply rises above typically 9.35 V.
This guarantees that the high-side
MOSFET will be off during power-up
or fault conditions.
Level Shift
The level shift control circuitry of the
low-side driver is connected to integrated
high-voltage N-channel MOSFET
transistors which perform the level-
shifting function for communication to
the high-side driver. Controlled current
capability allows the drain voltage to
float with the high-side driver. Two
individual channels produce a true
differential communication channel for
accurately controlling the high-side
driver in the presence of fast moving
high-voltage waveforms. The high
voltage level shift transistors employed
exhibit very low output capacitance,
minimizing the displacement currents
between the low-side and high-side
drivers during fast moving voltage
transients created during switching of
the external MOSFETs. As a result,
power dissipation is minimized and noise
immunity optimized.
The pulse circuit provides the two high-
voltage level shifters with precise timing
signals. These signals are used by the
discriminator to reject spurious noise.
The combination of differential
communication with the precise timing
provides maximum immunity to noise.
Simultaneous Conduction Lockout
A latch prevents the low-side driver and
high-side driver from being on at the
same time, regardless of the input signals.
Delay Circuit
The delay circuit matches the low-side
propagation delay with the combination
of the pulse circuit, high voltage level
shift, and high-side driver propagation
delays. This ensures that the low-side
driver and high-side driver will never be
on at the same time during switching
transitions in either direction.
Driver
The CMOS drive circuitry on both low-
side and high-side driver ICs provide
drive power to the gates of the external
MOSFETs. The drivers consist of a
CMOS buffer capable of driving external
transistor gates at up to 15 V.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| INT100S | Low-Side and High-side Drive with Simultaneous Conduction Lockout |
| INT200 | Low-side Drive and High-side Control with Simultaneous Conduction Lockout |
| INT200PFI1 | Low-side Drive and High-side Control with Simultaneous Conduction Lockout |
| INT200PFI2 | Low-side Drive and High-side Control with Simultaneous Conduction Lockout |
| INT200TFI1 | Low-side Drive and High-side Control with Simultaneous Conduction Lockout |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| INT100S | 制造商:POWERINT 制造商全稱:Power Integrations, Inc. 功能描述:Low-Side and High-side Drive with Simultaneous Conduction Lockout |
| INT-1532-L-5-L-010 | 制造商:TE Connectivity 功能描述:DIGITAL PANEL METER, 4-DIG, 57.7V-139V / 100V-240V, No. of Digits / Alpha:12, Me |
| INT-1532-L-5-M | 制造商:TE Connectivity 功能描述:DIGITAL PANEL METER, 4-DIG, 57.7V-139V / 100V-240V; No. of Digits / Alpha:12; Meter Function:Multifunction; Meter Range:-; Panel Cutout Height:92mm; Panel Cutout Width:92mm; Supply Voltage Range:100V AC to 250V AC, 100V DC to 250V DC;RoHS Compliant: NA |
| INT-1532L-5-M-000 | 制造商:TE Connectivity 功能描述:DIGITAL PANEL METER, 4-DIG, 57.7V-139V / 100V-240V; No. of Digits / Alpha:12; Meter Function:Multifunction; Meter Range:-; Panel Cutout Height:92mm; Panel Cutout Width:92mm; Supply Voltage Range:100V AC to 250V AC, 100V DC to 250V DC;RoHS Compliant: NA |
| INT-1532-L-5-M-001=1 | 制造商:TE Connectivity 功能描述:DIGITAL PANEL METER, 4-DIG, 57.7V-139V / 100V-240V; No. of Digits / Alpha:12; Meter Function:Multifunction; Meter Range:-; Panel Cutout Height:92mm; Panel Cutout Width:92mm; Supply Voltage Range:100V AC to 250V AC, 100V DC to 250V DC |
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