參數(shù)資料
型號： ILD66
廠商： SIEMENS AG
英文描述： PHOTODARLINGTON OPTOCOUPLER
中文描述： PHOTODARLINGTON光耦合器
文件頁數(shù)： 1/3頁
文件大?。?/td> 74K
代理商： ILD66
5–1
FEATURES
Internal RBE for High Stability
Current Transfer Ratio is Tested
at 2.0 mA and 0.7 mA Input
IL/ILD/ILQ66 Series:
- 1, 100% min. at
- 2, 300% min. at
- 3, 400% min. at
- 4, 500% min. at
Four Available CTR Categories per Package
Type
BV
CEO
>60 V
Standard DIP Packages
Underwriters Lab File #E52744
VDE 0884 Available with Option 1
DESCRIPTION
I
I
I
I
F
F
F
F
=2
=2
=0.7
=2
mA, V
mA, V
mA, V
mA, V
CE
CE
=10 V
=10 V
=10 V
=5 V
CE
CE
IL66, ILD66, and ILQ66 are optically coupled isola-
tors employing Gallium Arsenide infrared emitters
and silicon photodarlington detectors. Switching
can be accomplished while maintaining a high
degree of isolation between driving and load cir-
cuits, with no crosstalk between channels.
Maximum Ratings
Emitter
(Each Channel)
Peak Reverse Voltage........................................ 6 V
Continuous Forward Current.........................60 mA
Power Dissipation at 25
°
C ......................... 100 mW
Derate Linearly from 25
°
C ................... 1.33 mW/
Detector
(Each Channel)
Power Dissipation at 25
°
C Ambient........... 150 mW
Derate Linearly from 25
°
C ..................... 2.0 mW/
Package
Isolation Test Voltage
(t=1 sec.)........................................5300 VAC
Total Package Power Dissipation at 25
IL66.......................................................... 250 mW
ILD66 ....................................................... 400 mW
ILQ66....................................................... 500 mW
Derate Linearly from 25
°
C
IL66...................................................... 3.3 mW/
ILD66 ................................................. 5.33 mW/
ILQ66................................................. 6.67 mW/
Creepage.................................................7 min mm
Clearance ................................................7 min mm
Comparative Tracking Index..............................175
Isolation Resistance
V
IO
=500 V, T
A
=25
°
C................................
V
IO
=500 V, T
A
=100
°
C..............................
Storage Temperature................... –55
Operating Temperature................ –55
Lead Soldering Time at 260
°
C
°
C
RMS
°
C
°
°
°
C
C
C
≥
≥
10
10
12
11
°
°
C
C
°
°
C to +125
C to +100
°
C ....................10 sec.
V
D E
Dimensions in inches (mm)
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
.110 (2.79)
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) Typ.
.300 (7.62)
Typ.
(.min.
.018 (0.45)
.022 (0.55)
.335 (8.50)
.343 (8.70)
6
5
4
1
2
3
°
18
°
t4
.255 (6.48)
.268 (6.81)
3
4
6
5
.379 (9.63)
.390 (9.91)
.030 (.76)
.045 (1.14)
4
°
Typ.
.100 (2.54) Typ.
10
°
Typ.
3
°
–9
°
.305
T
yp.
(7.75)
T
yp.
.018 (.46)
.022 (.56)
.008 (.20)
.012 (.30)
.115 (2.92)
.135 (3.43)
1
2
8
7
.130 (3.30)
.150 (3.81)
.030 (.76 )
.040 (1.02)
1
2
3
6
5
4
Anode
Cathode
NC
Base
Collector
Emitter
Anode
Cathode
Cathode
Anode
Emitter
Collector
Collector
Emitter
1
2
3
4
8
7
6
5
Anode
Cathode
Cathode
Anode
Emitter
Collector
Collector
Emitter
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Emitter
Collector
Collector
Emitter
Anode
Cathode
Cathode
Anode
.248 (6.30)
.256 (6.50)
.255 (6.48)
.268 (6.81)
.779 (19.77 )
.790 (20.07)
Pin
One
I.D.
.130 (3.30)
.150 (3.81)
.030 (.76 )
.040 (1.02)
.030 (.76)
.045 (1.14)
4
°
Typ.
.100 (2.54) Typ.
.018 (.46)
.022 (.56)
10
°
Typ.
3
°
–9
°
.305 Typ.
(7.75) Typ.
.008 (.20)
.012 (.30)
.115 (2.92)
.135 (3.43)
Pin One I.D.
Pin One I.D.
SINGLE CHANNEL
DUAL CHANNEL
QUAD CHANNEL
PHOTODARLINGTON OPTOCOUPLER
IL66 SERIES
ILD66 SERIES
ILQ 66 SERIES
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參數(shù)描述
ILD66-1 功能描述:晶體管輸出光電耦合器 Photodarlington Out Dual CTR >100% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
ILD66-2 功能描述:晶體管輸出光電耦合器 Photodarlington Out Dual CTR >300% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
ILD66-2X007 功能描述:晶體管輸出光電耦合器 Phototransistor Out Dual CTR > 300% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
ILD66-2X007T 功能描述:晶體管輸出光電耦合器 Phototransistor Out Dual CTR > 300% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
ILD66-3 功能描述:晶體管輸出光電耦合器 Photodarlington Out Dual CTR >400% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
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