參數(shù)資料
型號: IKW50N60T
廠商: INFINEON TECHNOLOGIES AG
英文描述: Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述: 低損耗DuoPack:在IGBT的溝槽場終止技術(shù)和軟,恢復(fù)快反平行何快恢復(fù)二極管
文件頁數(shù): 9/13頁
文件大?。?/td> 416K
代理商: IKW50N60T
TrenchStop Series
IKW50N60T
q
Power Semiconductors
9
Rev. 2.1 Dec-04
Z
t
,
T
1μs
10μs 100μs
1ms
10ms 100ms
10
-2
K/W
10
-1
K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D
=0.5
Z
t
,
T
1μs
10μs 100μs
1ms
10ms 100ms
10
-2
K/W
10
-1
K/W
10 K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D
=0.5
t
P
,
PULSE WIDTH
t
P
,
PULSE WIDTH
Figure 21. IGBT transient thermal resistance
(
D = t
p
/
T
)
Figure 22. Diode transient thermal
impedance as a function of pulse
width
(
D
=
t
P
/
T
)
t
r
,
R
700A/μs
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(
V
R
=400V,
I
F
=50A,
Dynamic test circuit in Figure E)
800A/μs
900A/μs
1000A/μs
0ns
50ns
100ns
150ns
200ns
250ns
300ns
T
J
=25°C
T
J
=175°C
Q
r
,
R
700A/μs
800A/μs
900A/μs
1000A/μs
0.0μC
0.5μC
1.0μC
1.5μC
2.0μC
2.5μC
3.0μC
3.5μC
4.0μC
T
J
=25°C
T
J
=175°C
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(
V
R
= 400V,
I
F
= 50A,
Dynamic test circuit in Figure E)
R
,(K/W )
0.18355
0.12996
0.09205
0.03736
0.00703
R
1
τ
,
(s)
7.425*10
-2
8.34*10
-3
7.235*10
-4
1.035*10
-4
4.45*10
-5
C
1
=
τ
1
/
R
1
R
2
C
2
=
τ
2
/
R
2
R
,(K/W )
0.2441
0.2007
0.1673
0.1879
R
1
τ
,
(s)
7.037*10
-2
7.312*10
-3
6.431*10
-4
4.79*10
-5
6
C
1
=
τ
1
/
R
1
R
2
C
2
=
τ
2
/
R
2
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參數(shù)描述
IKW50N60T_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
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