參數(shù)資料
型號(hào)： IKW25T120
廠商： INFINEON TECHNOLOGIES AG
英文描述： TRENCHSTOP SERIES
中文描述： TRENCHSTOP系列
文件頁數(shù)： 11/15頁
文件大小： 450K
代理商： IKW25T120
IKW25T120
^
TrenchStop Series
Power Semiconductors
11
Preliminary / Rev. 1 Jul-02
t
r
,
R
400A/μs
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(
V
R
=600V,
I
F
=25A,
Dynamic test circuit in Figure E)
600A/μs
800A/μs
1000A/μs
0ns
100ns
200ns
300ns
400ns
500ns
T
J
=25°C
T
J
=150°C
Q
r
,
R
400A/μs
600A/μs
800A/μs
1000A/μs
0μC
1μC
2μC
3μC
4μC
5μC
T
J
=25°C
T
J
=150°C
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(
V
R
=600V,
I
F
=25A,
Dynamic test circuit in Figure E)
I
r
,
R
400A/μs
600A/μs
800A/μs
1000A/μs
0A
5A
10A
15A
20A
25A
30A
T
J
=25°C
T
J
=150°C
d
r
/
,
D
O
400A/μs
600A/μs
800A/μs
1000A/μs
-0A/μs
-100A/μs
-200A/μs
-300A/μs
-400A/μs
T
J
=25°C
T
J
=150°C
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(
V
R
=600V,
I
F
=25A,
Dynamic test circuit in Figure E)
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(
V
R
=600V,
I
F
=25A,
Dynamic test circuit in Figure E)
相關(guān)PDF資料
PDF描述
IKW40T120 LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARAALEL EMCON HE DIODE
IKW50N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IL-G-xxP-S3x2 2.5mm Contact Spacing PCB-to-Cable Connectors
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IKW25T120_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in TrenchStop? and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKW25T120FKSA1 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 50A 190W TO247-3
IKW30N60H3 功能描述:IGBT 晶體管 600V 30A 187W RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKW30N60H3FKSA1 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 60A 187W TO247-3
IKW30N60H3XK 制造商:Infineon Technologies AG 功能描述:
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