參數(shù)資料
型號： IKW20N60T
廠商： INFINEON TECHNOLOGIES AG
英文描述： IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
中文描述： 在IGBT的溝槽場終止技術(shù)和軟，恢復(fù)快反平行何快恢復(fù)二極管
文件頁數(shù)： 3/15頁
文件大小： 435K
代理商： IKW20N60T
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
IKP20N60T, IKB20N60T
TrenchStop Series
IKW20N60T
Power Semiconductors
3
Rev. 2.2 Dec-04
C
iss
C
oss
C
rss
Q
Gate
-
-
-
-
1100
71
32
120
-
-
-
-
V
CE
=25V,
V
GE
=0V,
f
=1MHz
pF
V
CC
=480V,
I
C
=20A
V
GE
=15V
TO-220-3-1
TO-247-3-1
TO-263-3-2
V
GE
=15V,
t
SC
≤
5
μ
s
V
CC
= 400V,
T
j
≤
150
°
C
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
L
E
-
7
-
nH
Short circuit collector current
1)
I
C(SC)
-
183.3
-
A
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
18
14
199
42
0.31
0.46
0.77
-
-
-
-
-
-
-
ns
T
j
=25
°
C,
V
CC
=400V,
I
C
=20A,
V
GE
=0/15V,
R
G
=12
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
2)
=131nH,
2)
=31pF
mJ
t
rr
Q
rr
I
rrm
di
rr
/dt
-
-
-
-
41
0.31
13.3
711
-
-
-
-
ns
μC
A
A/
μ
s
T
j
=25
°
C,
V
R
=400V,
I
F
=20A,
di
F
/dt
=880A/
μ
s
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2)
Leakage inductance
L
σ
and Stray capacity
C
σ
due to dynamic test circuit in Figure E.
相關(guān)PDF資料
PDF描述
IKP03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
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參數(shù)描述
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IKW25N120H3 功能描述:IGBT 晶體管 IGBT PRODUCTS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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