參數(shù)資料
型號(hào)： IKP20N60T
廠商： INFINEON TECHNOLOGIES AG
英文描述： IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
中文描述： 在IGBT的溝槽場(chǎng)終止技術(shù)和軟，恢復(fù)快反平行何快恢復(fù)二極管
文件頁(yè)數(shù)： 8/15頁(yè)
文件大?。?/td> 435K
代理商： IKP20N60T
IKP20N60T, IKB20N60T
TrenchStop Series
IKW20N60T
Power Semiconductors
8
Rev. 2.2 Dec-04
E
,
S
0A
5A
10A
15A
20A
25A
30A
35A
0.0mJ
0.4mJ
0.8mJ
1.2mJ
1.6mJ
2.0mJ
2.4mJ
E
ts
*
E
off
*)
E
and
E
include losses
due to diode recovery
E
on
*
E
,
S
0
15
30
45
60
0.0mJ
0.4mJ
0.8mJ
1.2mJ
1.6mJ
2.0mJ
2.4mJ
E
ts
*
E
off
*)
E
on
and
E
ts
include losses
due to diode recovery
E
on
*
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
R
G
= 12
,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
I
C
= 20A,
Dynamic test circuit in Figure E)
E
,
S
25°C
50°C
75°C
100°C
125°C
150°C
0.0mJ
0.2mJ
0.4mJ
0.6mJ
0.8mJ
1.0mJ
E
ts
*
E
off
*)
E
and
E
include losses
due to diode recovery
E
on
*
E
,
S
300V
350V
400V
450V
500V
550V
0.0mJ
0.2mJ
0.4mJ
0.6mJ
0.8mJ
1.0mJ
1.2mJ
1.4mJ
1.6mJ
1.8mJ
2.0mJ
E
ts
*
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
T
J
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/15V,
I
C
= 20A,
R
G
= 12
,
Dynamic test circuit in Figure E)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load,
T
J
= 175°C,
V
GE
= 0/15V,
I
C
= 20A,
R
G
= 12
,
Dynamic test circuit in Figure E)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IKP20N60T_08 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
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IKP40N65F5 功能描述:IGBT 晶體管 ENGINEERING SAMPLES TRENCHSTOP-5 IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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