參數(shù)資料
型號： IKP03N120H2
廠商： INFINEON TECHNOLOGIES AG
英文描述： HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述： 高速2技術(shù)與軟，恢復(fù)快反平行何快恢復(fù)二極管
文件頁數(shù)： 11/15頁
文件大小： 431K
代理商： IKP03N120H2
IKP03N120H2,
IKW03N120H2
IKB03N120H2
Power Semiconductors
11
Rev. 2, Mar-04
I
r
,
R
0Ohm
100Ohm
200Ohm
300Ohm
8A
10A
12A
14A
16A
T
J
=150°C
T
J
=25°C
d
r
/
,
D
O
0Ohm
100Ohm
200Ohm
300Ohm
-1800A/us
-1600A/us
-1400A/us
-1200A/us
-1000A/us
-800A/us
-600A/us
T
J
=150°C
T
J
=25°C
R
G
,
GATE RESISTANCE
Figure 25. Typical reverse recovery
current as a function of diode current
slope
(
V
R
=800V,
I
F
=3A,
Dynamic test circuit in Figure E)
R
G
,
GATE RESISTANCE
Figure 26. Typical diode peak rate of fall
of reverse recovery current as a
function of diode current slope
(
V
R
=800V,
I
F
=3A,
Dynamic test circuit in Figure E)
I
F
,
F
0V
1V
2V
3V
0A
2A
4A
T
J
=150°C
T
J
=25°C
V
F
,
F
-50°C
0°C
50°C
100°C
150°C
1.0V
1.5V
2.0V
2.5V
3.0V
I
F
=4A
I
F
=2A
I
F
=1A
V
F
,
FORWARD VOLTAGE
Figure 27. Typical diode forward current
as a function of forward voltage
T
J
,
JUNCTION TEMPERATURE
Figure 28. Typical diode forward
voltage as a function of junction
temperature
相關(guān)PDF資料
PDF描述
IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
IKB03N120H2 Tantalum Molded Capacitor; Capacitance: .47uF; Voltage: 35V; Case Size: 3.2x1.6 mm; Packaging: Tape & Reel
IKW25T120 TRENCHSTOP SERIES
IKW40T120 LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARAALEL EMCON HE DIODE
IKW50N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IKP03N120H2_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
IKP03N120H2XKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 9.6A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 9.6A 62.5W TO220-3
IKP04N60T 功能描述:IGBT 晶體管 LOW LOSS DuoPack 600V 4A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKP04N60T_09 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
IKP04N60TXKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 8A 3-Pin(3+Tab) TO-220 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 8A 42W TO220-3
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*