參數(shù)資料
型號: IKB06N60T
廠商: Electronic Theatre Controls, Inc.
英文描述: Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述: 低損耗DuoPack:在IGBT的溝槽場終止技術(shù)和軟,恢復(fù)快反平行何快恢復(fù)二極管
文件頁數(shù): 9/14頁
文件大?。?/td> 371K
代理商: IKB06N60T
IKB06N60T
IKP06N60T
^
TrenchStop series
Power Semiconductors
9
Rev. 2 Oct-04
V
G
,
G
-
E
0nC
10nC
20nC
30nC
40nC
50nC
0V
5V
10V
15V
480V
120V
c
C
0V
10V
20V
10pF
100pF
1nF
C
rss
C
oss
C
iss
Q
GE
,
GATE CHARGE
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(
V
GE
=0V,
f
= 1 MHz)
Figure 17. Typical gate charge
(
I
C
= 6 A)
I
C
,
C
12V
14V
16V
18V
0A
20A
40A
60A
80A
t
S
,
S
10V
11V
12V
13V
14V
0μs
2μs
4μs
6μs
8μs
10μs
12μs
V
GE
,
GATE
-
EMITTETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
(
V
CE
400V,
T
j
150
°
C)
V
GE
,
GATE
-
EMITETR VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(
V
CE
=600V
,
start at
T
J
=
25°C,
T
Jmax
<150°C)
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