參數(shù)資料
型號: IKA06N60T
廠商: INFINEON TECHNOLOGIES AG
英文描述: Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述: 低損耗DuoPack:在IGBT的溝槽場終止技術和軟,恢復快反平行何快恢復二極管
文件頁數(shù): 12/14頁
文件大?。?/td> 354K
代理商: IKA06N60T
IKA06N60T
^
TrenchStop series
Power Semiconductors
12
Rev. 2 Oct-04
P-TO220-3-31
dimensions
symbol
[mm]
[inch]
min
max
min
max
A
10.37
10.63
0.4084
0.4184
B
15.86
16.12
0.6245
0.6345
C
0.65
0.78
0.0256
0.0306
D
2.95 typ.
0.1160 typ.
E
3.15
3.25
0.124
0.128
F
6.05
6.56
0.2384
0.2584
G
13.47
13.73
0.5304
0.5404
H
3.18
3.43
0.125
0.135
K
0.45
0.63
0.0177
0.0247
L
1.23
1.36
0.0484
0.0534
M
2.54 typ.
0.100 typ.
N
4.57
4.83
0.1800
0.1900
P
2.57
2.83
0.1013
0.1113
T
2.51
2.62
0.0990
0.1030
相關PDF資料
PDF描述
IKB06N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKB20N60T IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
IKP20N60T IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
IKW20N60T IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
IKP03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
相關代理商/技術參數(shù)
參數(shù)描述
IKA06N60TXKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 10A 3-Pin(3+Tab) TO-220FP 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 10A 28W TO220-3
IKA08N65F5 功能描述:IGBT 晶體管 ENGINEERING SAMPLES TRENCHSTOP-5 IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKA08N65F5XKSA1 功能描述:IGBT 晶體管 IGBT PRODUCTS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKA08N65H5 功能描述:IGBT 晶體管 10-120 kHz IGBT with Anti-Parallel Diode RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKA08N65H5XKSA1 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube