參數(shù)資料
型號(hào)： IDW75E60
廠商： INFINEON TECHNOLOGIES AG
英文描述： Fast Switching EmCon Diode
中文描述： 快速開關(guān)快恢復(fù)二極管
文件頁數(shù)： 2/6頁
文件大?。?/td> 168K
代理商： IDW75E60
IDW75E60
Power Semiconductors
2
Rev. 1.1 Mar 06
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
Thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic,
at
T
j
= 25
°
C, unless otherwise specified
R
thJC
0.5
R
thJA
40
K/W
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
Diode forward voltage
V
RRM
V
F
I
R
=0.25mA
600
-
-
-
-
I
F
=75A
T
j
=25
°
C
T
j
=175
°
C
V
R
=600V
T
j
=25
°
C
T
j
=175
°
C
1.65
1.65
2.0
-
V
Reverse leakage current
I
R
-
-
-
-
40
1000
μ
A
Dynamic Electrical Characteristics
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
t
rr
Q
rr
I
rr
dI
rr
/dt
-
-
-
-
121
2.4
38.5
921
-
-
-
-
ns
μC
A
A/μs
T
j
=25
°
C
V
R
=400V,
I
F
=75A,
dI
F
/dt
=1460A/μs
t
rr
Q
rrm
I
rr
dI
rr
/dt
-
-
-
-
155
4.4
46.6
960
-
-
-
-
ns
μC
A
A/μs
T
j
=125
°
C
V
R
=400V,
I
F
=75A,
dI
F
/dt
=1460A/μs
t
rr
Q
rrm
I
rr
dI
rr
/dt
-
-
-
-
182
5.8
56.2
1013
-
-
-
-
ns
μC
A
A/μs
T
j
=175
°
C
V
R
=400V,
I
F
=75A,
dI
F
/dt
=1460A/μs
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