IDT72V36100/72V36110 3.3V HIGH DENSITY SUPERSYNC IITM <" />
參數(shù)資料
型號: IDT72V36100L6PF8
廠商: IDT, Integrated Device Technology Inc
文件頁數(shù): 21/48頁
文件大?。?/td> 0K
描述: IC FIFO 64X36 6NS 128QFP
標(biāo)準(zhǔn)包裝: 1,000
系列: 72V
功能: 同步
存儲容量: 2.3K(64 x 36)
數(shù)據(jù)速率: 166MHz
訪問時間: 4ns
電源電壓: 3.15 V ~ 3.45 V
工作溫度: 0°C ~ 70°C
安裝類型: 表面貼裝
封裝/外殼: 128-LQFP
供應(yīng)商設(shè)備封裝: 128-TQFP(14x20)
包裝: 帶卷 (TR)
其它名稱: 72V36100L6PF8
28
COMMERCIAL AND INDUSTRIAL
TEMPERATURE RANGES
IDT72V36100/72V36110 3.3V HIGH DENSITY SUPERSYNC IITM 36-BIT FIFO
65,536 x 36 and 131,072 x 36
OCTOBER 22, 2008
Figure 8. Read Cycle, Empty Flag and First Data Word Latency Timing (IDT Standard Mode)
NOTES:
1. tSKEW1 is the minimum time between a rising WCLK edge and a rising RCLK edge to guarantee that
EF will go HIGH (after one RCLK cycle plus tREF). If the time between the rising edge
of WCLK and the rising edge of RCLK is less than tSKEW1, then
EF deassertion may be delayed one extra RCLK cycle.
2.
LD = HIGH.
3. First data word latency = tSKEW1 + 1*TRCLK + tREF.
NOTES:
1. tSKEW1 is the minimum time between a rising RCLK edge and a rising WCLK edge to guarantee that
FF will go HIGH (after one WCLK cycle pus tWFF). If the time between
the rising edge of the RCLK and the rising edge of the WCLK is less than tSKEW1, then the
FF deassertion may be delayed one extra WCLK cycle.
2.
LD = HIGH, OE = LOW, EF = HIGH
Figure 7. Write Cycle and Full Flag Timing (IDT Standard Mode)
NO OPERATION
RCLK
REN
6117 drw13
EF
tCLK
tCLKH
tCLKL
tENH
tREF
tA
tOLZ
tOE
Q0 - Qn
OE
WCLK
(1)
tSKEW1
WEN
D0 - Dn
tENS
tENH
tDS
tDH
D0
1
2
tOLZ
NO OPERATION
LAST WORD
D0
D1
tENS
tENH
tDS
tDH
tOHZ
LAST WORD
tREF
tENH
tENS
tA
tREF
tENS
tENH
D0 - Dn
WEN
RCLK
REN
tENH
Q0 - Qn
DATA READ
NEXT DATA READ
DATA IN OUTPUT REGISTER
tSKEW1
(1)
6117 drw12
WCLK
NO WRITE
1
2
1
2
tDS
NO WRITE
tWFF
tA
tENS
tSKEW1
(1)
tDS
tA
D X
tDH
tCLK
tCLKH
tCLKL
DX+1
tWFF
tDH
FF
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