參數(shù)資料
型號(hào): IDT7140SA25PGI
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: SRAM
英文描述: HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM
中文描述: 1K X 8 DUAL-PORT SRAM, 25 ns, PDIP48
封裝: GREEN, PLASTIC, DIP-48
文件頁數(shù): 6/19頁
文件大?。?/td> 147K
代理商: IDT7140SA25PGI
IDT7130SA/LA and IDT7140SA/LA
High-Speed 1K x 8 Dual-Port Static SRAM
Military, Industrial and Commercial Temperature Ranges
14
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range(2)
NOTES:
1.
PLCC, TQFP and STQFP package only.
2.
'X' in part numbers indicates power rating (SA or LA).
Timing Waveform of BUSY Arbitration Controlled by CE Timing(1)
Timing Waveform by BUSY Arbitration Controlled
by Address Match Timing(1)
tAPS
ADDR
'A'
AND 'B'
ADDRESSES MATCH
tBAC
tBDC
CE'B'
CE'A'
BUSY'A'
2689 drw 14
(2)
BUSY'B'
ADDRESSES DO NOT MATCH
ADDRESSES MATCH
tAPS
ADDR'A'
ADDR'B'
2689 drw 15
(2)
tBAA
tBDA
tRC OR tWC
NOTES:
1. All timing is the same for left and right ports. Port “A” may be either left or right port. Port “B” is the opposite from port “A”.
2. If tAPS is not satisified, the
BUSY will be asserted on one side or the other, but there is no guarantee on which side BUSY will be asserted (7130 only).
7130X20(1)
7140X20(1)
Com'l Only
7130X25
7140X25
Com'l, Ind
& Military
7130X35
7140X35
Com'l
& Military
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
INTERRUPT TIMING
tAS
Address Set-up Time
0
____
0
____
0
____
ns
tWR
Write Recovery Time
0
____
0
____
0
____
ns
tINS
Interrupt Set Time
____
20
____
25
____
25
ns
tINR
Interrupt Reset Time
____
20
____
25
____
25
ns
2689 tbl 12a
相關(guān)PDF資料
PDF描述
IDT71589S25DB 32K X 9 CACHE TAG SRAM, 24 ns, CDIP32
IDT71T75902S75BGI8 1M X 18 ZBT SRAM, 7.5 ns, PBGA119
IDT71V2558XS166BQ 256K X 18 ZBT SRAM, 3.5 ns, PBGA165
IDT71V3576S133BGI 128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect
IDT71V3576S133BQ 128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT7140SA35C 功能描述:IC SRAM 8KBIT 35NS 48DIP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口,同步 存儲(chǔ)容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8
IDT7140SA35CB 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 8KBIT 35NS SB48
IDT7140SA35J 功能描述:IC SRAM 8KBIT 35NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA(6x8) 包裝:帶卷 (TR)
IDT7140SA35J8 功能描述:IC SRAM 8KBIT 35NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA(6x8) 包裝:帶卷 (TR)
IDT7140SA35JI 功能描述:IC SRAM 8KBIT 35NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA(6x8) 包裝:帶卷 (TR)