參數(shù)資料
型號(hào): IDT04S60C
廠商: INFINEON TECHNOLOGIES AG
英文描述: 2nd Generation thinQ! SiC Schottky Diode
中文描述: 第二代thinQ!碳化硅肖特基二極管
文件頁(yè)數(shù): 2/7頁(yè)
文件大?。?/td> 259K
代理商: IDT04S60C
IDT04S60C
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
-
-
3.6
K/W
Thermal resistance,
junction - ambient
R
thJA
leaded
-
-
62
Soldering temperature,
wavesoldering only allowed at leads
T
sold
1.6mm (0.063 in.) from
case for 10s
-
-
260
°C
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
DC blocking voltage
V
DC
I
R
=0.05 mA
600
-
-
V
Diode forward voltage
V
F
I
F
=4 A,
T
j
=25 °C
-
1.7
1.9
I
F
=4 A,
T
j
=150 °C
-
2
2.4
Reverse current
I
R
V
R
=600 V,
T
j
=25 °C
-
0.5
50
μA
V
R
=600 V,
T
j
=150 °C
-
2
500
AC characteristics
Total capacitive charge
Q
c
-
8
-
nC
Switching time
3)
t
c
-
-
<10
ns
C
V
R
=1 V,
f
= MHz
-
130
-
pF
V
R
=300 V,
f
=1 MHz
-
20
-
V
R
=600 V,
f
=1 MHz
-
20
-
Values
V
R
=400 V,
I
F
I
F,max
,
d
i
F
/d
t
=200 A/μs,
T
j
=150 °C
1)
J-STD20 and JESD22
4)
Only capacitive charge occuring, guaranteed by design.
2)
All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA.
3)
t
c
is the time constant for the capacitive displacement current waveform (independent from T
j
, I
LOAD
and
di/dt), different from t
rr
, which is dependent on T
j
, I
LOAD
, di/dt. No reverse recovery time constant t
rr
due to
absence of minority carrier injection.
Rev. 2.0
page 2
2006-03-08
相關(guān)PDF資料
PDF描述
IDT05S60C 2nd Generation thinQ! SiC Schottky Diode
IDT06S60C 2nd generation thinQ! SiC Schottky Diode
IDT08S60C 2nd Generation thinQ! SiC Schottky Diode
IDT12S60C 2nd Generation thinQ! SiC Schottky Diode
IDT77950 SwitchStarTM Reference Design Using the IDT77V400 Switching Memory and IDT77V500 Switch Controller
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT04S60C_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2nd Generation thinQ SiC Schottky Diode
IDT04S60CXK 制造商:Infineon Technologies AG 功能描述:Diode Schottky 600V 4A 2-Pin(2+Tab) TO-220
IDT05S60C 功能描述:肖特基二極管與整流器 2ND GEN THINQ 600V SiC Schottky Diode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
IDT05S60C_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2nd Generation thinQ SiC Schottky Diode
IDT05S60CXK 制造商:Infineon Technologies AG 功能描述:Diode Schottky 600V 5A 2-Pin(2+Tab) TO-220