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參數(shù)資料
| 型號： | IDD04S60C |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 2nd Generation thinQ! SiC Schottky Diode |
| 中文描述： | 第二代thinQ！碳化硅肖特基二極管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 249K |
| 代理商： | IDD04S60C |
IDD04S60C
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
-
-
4.1
K/W
Thermal resistance,
junction - ambient
SMD version, device
on PCB, minmal
footprint
-
-
75
SMD Version, device
on PCB, 6 cm
2
cooling
3)
-
-
50
Soldering temperature
reflowsoldering
T
sold
reflow MSL 3
-
-
260
°C
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
DC blocking voltage
V
DC
I
R
=0.05 mA
600
-
-
V
Diode forward voltage
V
F
I
F
=4 A,
T
j
=25 °C
-
1.7
1.9
I
F
=4 A,
T
j
=150 °C
-
2
2.4
Reverse current
I
R
V
R
=600 V,
T
j
=25 °C
-
0.5
50
μA
V
R
=600 V,
T
j
=150 °C
-
2
500
AC characteristics
Total capacitive charge
Q
c
-
8
-
nC
Switching time
4)
t
c
-
-
<10
ns
C
V
R
=1 V,
f
= MHz
-
130
-
pF
V
R
=300 V,
f
=1 MHz
-
20
-
V
R
=600 V,
f
=1 MHz
-
20
-
5)
Only capacitive charge occuring, guaranteed by design.
3)
Device on 40mm*40mm*1.5mm epox PCB FR4 with 6cm
2
(one layer, 70μm thick) copper area for drain
connection. PCB is vertikal with out blown air.
4)
t
c
is the time constant for the capacitive displacement current waveform (independent from T
j
, I
LOAD
and
di/dt), different from t
rr
, which is dependent on T
j
, I
LOAD
, di/dt. No reverse recovery time constant t
rr
due to
absence of minority carrier injection.
Values
V
R
=400 V,
I
F
≤
I
F,max
,
d
i
F
/d
t
=200 A/μs,
T
j
=150 °C
2)
All devices tested under avalanche conditions, for a time periode of 5ms at 5 mA.
R
thJA
1)
J-STD20 and JESD22
Rev. 2.0
page 2
2006-04-03
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDD04S60CBUMA1 | 制造商:Infineon Technologies AG 功能描述:Diode Schottky 600V 4A 3-Pin(2+Tab) TO-252 制造商:Infineon Technologies AG 功能描述:SIC DIODEN - Tape and Reel 制造商:Infineon Technologies AG 功能描述:DIODE SCHOTTKY 600V 5.6A TO252-3 |
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