參數(shù)資料
型號： ID80C88-2
廠商： HARRIS SEMICONDUCTOR
元件分類： 微控制器/微處理器
英文描述： CMOS 8/16-Bit Microprocessor
中文描述： 8-BIT, 8 MHz, MICROPROCESSOR, CDIP40
文件頁數(shù)： 15/32頁
文件大?。?/td> 246K
代理商： ID80C88-2
3-15
Absolute Maximum Ratings
Thermal Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+8.0V
Input, Output or I/O Voltage . . . . . . . . . . . GND -0.5V to V
CC
+0.5V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
M80C88-2 Only. . . . . . . . . . . . . . . . . . . . . . . . . +4.75V to +5.25V
Operating Temperature Range
C80C88/-2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0
o
C to +70
o
C
I80C88/-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40
o
C to +85
o
C
M80C88/-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Thermal Resistance (Typical)
PDIP Package . . . . . . . . . . . . . . . . . . .
PLCC Package . . . . . . . . . . . . . . . . . .
SBDIP Package. . . . . . . . . . . . . . . . . .
CLCC Package . . . . . . . . . . . . . . . . . .
Maximum Junction Temperature
Ceramic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175
o
C
Plastic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+150
o
C
Storage Temperature Range. . . . . . . . . . . . . . . . . .-65
o
C to +150
o
C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . .+300
o
C
(Lead tips only for surface mount packages)
θ
JA
(
o
C/W)
θ
JC
(
o
C/W)
50
46
30
40
-
-
N/A
N/A
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9750 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
DC Electrical Specifications
V
CC
= 5.0V,
±
10%; T
A
= 0
o
C to +70
o
C (C80C88, C80C88-2)
V
CC
= 5.0V,
±
10%; T
A
= -40
o
C to +85
o
C (l80C88, I80C88-2)
V
CC
= 5.0V,
±
10%; T
A
= -55
o
C to +125
o
C (M80C88)
V
CC
= 5.0V,
±
5%;
T
A
= -55
o
C to +125
o
C (M80C88-2)
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITION
V
lH
Logical One
Input Voltage
2.0
2.2
-
V
V
C80C88, I80C88 (Note 4)
M80C88 (Note 4)
V
IL
Logical Zero Input Voltage
-
0.8
V
VIHC
CLK Logical One Input Voltage
V
CC
-0.8
-
V
VILC
CLK Logical Zero Input Voltage
-
0.8
V
V
OH
Output High Voltage
3.0
V
CC
-0.4
-
V
V
lOH = -2.5mA
lOH = -100
μ
A
V
OL
Output Low Voltage
-
0.4
V
lOL = +2.5mA
I
I
Input Leakage Current
-1.0
1.0
μ
A
V
IN
= 0V or V
CC
Pins 17-19, 21-23, 33
lBHH
Input Current-Bus Hold High
-40
-400
μ
A
V
IN
= - 3.0V (Note 1)
lBHL
Input Current-Bus Hold Low
40
400
μ
A
V
IN
= - 0.8V (Note 2)
I
O
Output Leakage Current
-
-10.0
μ
A
V
OUT
= 0V (Note 5)
ICCSB
Standby Power Supply Current
-
500
μ
A
V
CC
= 5.5V (Note 3)
ICCOP
Operating Power Supply Current
-
10
mA/MHz
FREQ = Max, V
IN
= V
CC
or GND,
Outputs Open
NOTES:
1. lBHH should be measured after raising V
IN
to V
CC
and then lowering to 3.0V on the following pins 2-16, 26-32, 34-39.
2. IBHL should be measured after lowering V
IN
to GND and then raising to 0.8V on the following pins: 2-16, 35-39.
3. lCCSB tested during clock high time after HALT instruction executed. V
IN
= V
CC
or GND, V
CC
= 5.5V, Outputs unloaded.
4. MN/MX is a strap option and should be held to V
CC
or GND.
5. IO should be measured by putting the pin in a high impedance state and then driving V
OUT
to GND on the following pins: 26-29 and 32.
Capacitance
T
A
= 25
o
C
SYMBOL
PARAMETER
TYPICAL
UNITS
TEST CONDITIONS
CIN
Input Capacitance
25
pF
FREQ = 1MHz. All measurements are referenced to device GND
COUT
Output Capacitance
25
pF
FREQ = 1MHz. All measurements are referenced to device GND
CI/O
I/O Capacitance
25
pF
FREQ = 1MHz. All measurements are referenced to device GND
80C88
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