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參數(shù)資料
| 型號(hào)： | IC41C16100AS |
| 英文描述： | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 100萬× 16（16兆）動(dòng)態(tài)與江戶頁面模式內(nèi)存 |
| 文件頁數(shù)： | 8/21頁 |
| 文件大小： | 231K |
| 代理商： | IC41C16100AS |
IC41C16100A/IC41C16100AS
IC41LV16100A/IC41LV16100AS
8
Integrated Circuit Solution Inc.
DR030-0A 09/28/2001
AC CHARACTERISTICS
(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-50
-60
Symbol
Parameter
Min.
Max.
Min.
Max.
Units
t
RC
t
RAC
t
CAC
t
AA
t
RAS
t
RP
t
CAS
t
CP
t
CSH
t
RCD
t
ASR
t
RAH
t
ASC
t
CAH
t
RAD
t
RAL
t
RSH
t
RHCP
t
CLZ
t
CRP
t
OD
t
OE
t
OED
t
OEHC
t
OEP
t
RCS
t
RRH
Random READ or WRITE Cycle Time
Access Time from
RAS
(6, 7)
Access Time from
CAS
(6, 8, 15)
Access Time from Column-Address
(6)
RAS
Pulse Width
RAS
Precharge Time
CAS
Pulse Width
(26)
CAS
Precharge Time
(9, 25)
CAS
Hold Time
(21)
RAS
to
CAS
Delay Time
(10, 20)
Row-Address Setup Time
Row-Address Hold Time
Column-Address Setup Time
(20)
Column-Address Hold Time
(20)
RAS
to Column-Address Delay Time
(11)
Column-Address to
RAS
Lead Time
RAS
Hold Time
(27)
RAS
Hold Time from
CAS
Precharge
CAS
to Output in Low-Z
(15, 29)
CAS
to
RAS
Precharge Time
(21)
Output Disable Time
(19, 28, 29)
Output Enable Time
(15, 16)
Output Enable Data Delay (Write)
OE
HIGH Hold Time from
CAS
HIGH
OE
HIGH Pulse Width
Read Command Setup Time
(17, 20)
Read Command Hold Time
(referenced to
RAS
)
(12)
Read Command Hold Time
(referenced to
CAS
)
(12, 17, 21)
Write Command Hold Time
(17, 27)
Write Command Pulse Width
(17)
WE
Pulse Widths to Disable Outputs
Write Command to
RAS
Lead Time
(17)
Write Command to
CAS
Lead Time
(17, 21)
Write Command Setup Time
(14, 17, 20)
84
—
—
—
50
30
8
10
38
12
0
8
0
8
10
25
8
35
0
5
0
—
20
5
10
5
10
—
50
13
25
10K
—
10K
—
—
37
—
—
—
—
25
—
—
—
—
—
12
12
—
—
—
—
—
104
—
—
—
60
40
10
10
40
14
0
10
0
10
12
30
10
37
0
5
0
—
20
5
10
5
10
—
60
15
30
10K
—
10K
—
—
45
—
—
—
—
30
—
—
—
—
—
15
15
—
—
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
RCH
0
—
0
—
ns
t
WCH
t
WP
t
WPZ
t
RWL
t
CWL
t
WCS
8
8
10
13
8
0
—
—
—
—
—
—
10
10
10
15
10
0
—
—
—
—
—
—
ns
ns
ns
ns
ns
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IC41LV16100A | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IC41LV16100A-50T | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IC41LV16100A-60K | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IC41LV16100A-60T | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IC41LV16100AS | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IC41C16100AS-50K | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IC41C16100AS-50T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IC41C16100AS-60K | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IC41C16100AS-60T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IC41C16100S | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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