
IBM2017M016
Datasheet
SiGe BiCMOS CDMA Power Amplifier
Advance
Page 2 of 7
November 14, 2001
Electrical and Thermal Characteristics
Table 1. Absolute Minimum and Maximum Ratings
Parameter
Symbol
Minimum
Maximum
Units
Notes
Supply voltage
V
CC
--
2.9
5.0
Vdc
--
Standby current
--
1.0
mA
1
RF input power
--
--
+5
dBm
--
Collector-emitter breakdown (open)
BVceo
5.0
--
Vdc
--
PA on/off control
ON/OFF
-0.6
3.6
Vdc
--
Analog Efficiency Control
Vaec
--
4.0
Vdc
--
Operating temperature
--
-20
+85
°C
--
Storage temperature
--
-65
+150
°C
--
Notes:
1) Advance units only. Standby current for production units <1
m
A
Table 2. RF Specifications, Standby Mode
Note:
All measurements taken using the IBM2017EVBA Demonstration Board under IS-95 reverse link modulation
with V
CC
= 3.5Vdc; T
A
= 25°C; ON/OFF input = logic ‘0’
Parameter
Minimum
Typical
Maximum
Units
Frequency range
1850
1880
1910
MHz
Gain
--
--
-30
dB
Leakage current
--
--
1.0
mA
Table 3. RF Specifications, CDMA High Power Mode
Note:
All measurements taken using the IBM2017EVBA Demonstration Board under IS-95 reverse link modulation
@ with V
CC
= 3.5Vdc; T
A
= 25°C; ON/OFF input = logic ‘0’
Parameter
Symbol
Minimum
Typical
Maximum
Units
Notes
Analog efficiency control
Vaec
--
1.82
--
Vdc
1
Frequency range
--
1850
1880
1910
MHz
--
Gain
--
--
29
--
dB
--
Gain vs. temperature
--
-2
--
+2
dB
2
Noise figure
--
4.0
4.5
5.5
dB
--
Output power
--
--
+28.5
--
dBm
--
Quiescent current
Icq
--
70
80
mA
--
PAE
--
--
32
--
%
--
ACPR
--
-45
--
--
dBc
3
ACPR, temperature/voltage
--
--
-43
--
dBc
3
ALT1
--
--
-51
--
dBc
4
Stability
--
--
-60
--
dBc
5
Harmonics
--
--
-30
--
dBc
--
Input VSWR
--
--
--
2:1
--
--
Ruggedness VSWR
--
10:1
--
--
--
6
1. Icq = 70mA. Typical combined quiescent of stages 1, 2, and 3.
2. -20 to +85°C
3. ±1.25 MHz
4. ±1.98 MHz
5. Maximum spurs with out-of-band load VSWR < 5:1, in-band load VSWR < 3:1
6. No damage with P
out
= +30dBm, V
CC
= 5Vdc