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參數(shù)資料
| 型號： | HYS72T64020HU-25F-A |
| 廠商： | QIMONDA AG |
| 元件分類： | DRAM |
| 英文描述： | 240-Pin Unbuffered DDR2 SDRAM Modules |
| 中文描述： | 64M X 72 DDR DRAM MODULE, 0.4 ns, DMA240 |
| 封裝： | GREEN, DIMM-240 |
| 文件頁數(shù)： | 22/73頁 |
| 文件大?。?/td> | 1574K |
| 代理商： | HYS72T64020HU-25F-A |
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Internet Data Sheet
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
22
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
16)
t
HZ
and
t
LZ
transitions occur in the same access time as valid data transitions. These parameters are referenced to a specific voltage level
which specifies when the device output is no longer driving (
t
HZ
), or begins driving (
t
LZ
) .
17)
t
DQSQ
: Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as output
slew rate mismatch between DQS / DQS and associated DQ in any given cycle.
18)
t
HP
is the minimum of the absolute half period of the actual input clock.
t
HP
is an input parameter but not an input specification parameter.
It is used in conjunction with t
QHS
to derive the DRAM output timing
t
. The value to be used for
t
calculation is determined by the
following equation;
t
= MIN (
,
t
), where,
t
CH.ABS
is the minimum of the actual instantaneous clock high time;
t
CL.ABS
is the
minimum of the actual instantaneous clock low time.
19)
t
accounts for: 1) The pulse duration distortion of on-chip clock circuits, which represents how well the actual
t
at the input is
transferred to the output; and 2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the next
transition, both of which are independent of each other, due to data pin skew, output pattern effects, and pchannel to n-channel variation
of the output drivers.
20)
t
=
t
–
t
, where:
t
is the minimum of the absolute half period of the actual input clock; and
t
is the specification value under the
max column. {The less half-pulse width distortion present, the larger the
t
value is; and the larger the valid data eye will be.}
Examples: 1) If the system provides
t
HP
of 1315 ps into a DDR2–667 SDRAM, the DRAM provides
t
QH
of 975 ps minimum. 2) If the system
provides
t
HP
of 1420 ps into a DDR2–667 SDRAM, the DRAM provides
t
QH
of 1080 ps minimum.
21) These parameters are measured from a data strobe signal ((L/U/R)DQS / DQS) crossing to its respective clock signal (CK / CK) crossing.
The spec values are not affected by the amount of clock jitter applied (i.e.
t
,
t
, etc.), as these are relative to the clock signal
crossing. That is, these parameters should be met whether clock jitter is present or not.
22) Input waveform timing is referenced from the input signal crossing at the
V
IH.AC
level for a rising signal and
V
IL.AC
for a falling signal applied
to the device under test. See
Figure 5
.
23) These parameters are measured from a command/address signal (CKE, CS, RAS, CAS, WE, ODT, BA0, A0, A1, etc.) transition edge to
its respective clock signal (CK / CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e.
t
,
t
,
etc.), as the setup and hold are relative to the clock signal crossing that latches the command/address. That is, these parameters should
be met whether clock jitter is present or not.
24) Input waveform timing is referenced from the input signal crossing at the
V
IL.DC
level for a rising signal and
V
IH.DC
for a falling signal applied
to the device under test. See
Figure 5
.
25)
t
RPST
end point and
t
RPRE
begin point are not referenced to a specific voltage level but specify when the device output is no longer driving
(
), or begins driving (
t
).
Figure 3
shows a method to calculate these points when the device is no longer driving (
t
), or begins
driving (
t
) by measuring the signal at two different voltages. The actual voltage measurement points are not critical as long as the
calculation is consistent.
26) When the device is operated with input clock jitter, this parameter needs to be derated by the actual
t
of the input clock. (output
deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has
t
JIT.PER.MIN
= – 72 ps
and
t
JIT.PER.MAX
= + 93 ps, then
t
=
t
+
t
= 0.9 x
t
– 72 ps = + 2178 ps and
t
RPRE.MAX(DERATED)
=
t
RPRE.MAX
+
t
JIT.PER.MAX
t
CK.AVG
+ 93 ps = + 2843 ps. (Caution on the MIN/MAX usage!).
27) When the device is operated with input clock jitter, this parameter needs to be derated by the actual
t
of the input clock. (output
deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has
t
JIT.DUTY.MIN
= – 72 ps
and
t
JIT.DUTY.MAX
= + 93 ps, then
t
RPST.MIN(DERATED)
=
t
RPST.MIN
+
t
JIT.DUTY.MIN
= 0.4 x
t
CK.AVG
– 72 ps = + 928 ps and
t
RPST.MAX(DERATED)
=
t
RPST.MAX
+
t
JIT.DUTY.MAX
= 0.6 x
t
CK.AVG
+ 93 ps = + 1592 ps. (Caution on the MIN/MAX usage!).
28) DAL = WR + RU{
t
RP
(ns) /
t
CK
(ns)}, where RU stands for round up. WR refers to the tWR parameter stored in the MRS. For
t
RP
, if the result
of the division is not already an integer, round up to the next highest integer.
t
refers to the application clock period. Example: For
DDR2–533 at
t
CK
= 3.75 ns with
t
WR
programmed to 4 clocks.
t
DAL
= 4 + (15 ns / 3.75 ns) clocks = 4 + (4) clocks = 8 clocks.
29)
t
DAL.nCK
= WR [nCK] +
t
nRP.nCK
= WR + RU{
t
RP
[ps] /
t
CK.AVG
[ps] }, where WR is the value programmed in the EMR.
30)
t
WTR
is at lease two clocks (2 x
t
CK
) independent of operation frequency.
31)
t
of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the valid input level the
entire time it takes to achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not transition from its valid level during
the time period of
t
IS
+ 2 x
t
CK
+
t
IH
.
相關(guān)PDF資料 |
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|---|---|
| HYS72T64020HU-3-A | 240-Pin Unbuffered DDR2 SDRAM Modules |
| HYS72T64020HU-3S-A | 240-Pin Unbuffered DDR2 SDRAM Modules |
| HYS72T512020HR | 240-Pin Registered-DDR2-SDRAM Modules |
| HYS72T512020HR-3.7-A | 240-Pin Registered-DDR2-SDRAM Modules |
| HYS72T512020HR-5-A | 240-Pin Registered-DDR2-SDRAM Modules |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYS72T64020HU-3-A | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:240-Pin Unbuffered DDR2 SDRAM Modules |
| HYS72T64020HU-3S-A | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:240-Pin Unbuffered DDR2 SDRAM Modules |
| HYS72T64300HP-3.7-A | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:240-Pin Registered DDR2 SDRAM Modules |
| HYS72T64300HP-3S-A | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:240-Pin Registered DDR2 SDRAM Modules |
| HYS72T64301HP | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:240-Pin Registered DDR2 SDRAM Modules |
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