參數(shù)資料
型號: HYS72T512420EFA-25F-C
廠商: QIMONDA AG
元件分類: DRAM
英文描述: 240-Pin Fully-Buffered DDR2 SDRAM Modules DDR2 SDRAM RoHS Compliant Products
中文描述: 512M X 72 DDR DRAM MODULE, DMA240
封裝: GREEN, DIMM-240
文件頁數(shù): 16/37頁
文件大?。?/td> 1270K
代理商: HYS72T512420EFA-25F-C
HYS72T512420EFA–[25F/3S]–C
Fully-Buffered DDR2 SDRAM Modules
Internet Data Sheet
Rev.1.20, 2007-10-19
03202007-06NE-DYYI
16
4
Electrical Characteristics
This chapter describes the electrical characteristics.
4.1
Operating Conditions
This chapter describes the operating conditions.
TABLE 8
Absolute Maximum Ratings
Attention: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
TABLE 9
Operating Temperature Range
Parameter
Symbol
Rating
Unit
Notes
Min.
Max.
Voltage on any SMbus interface signal pin relative to
V
SS
Voltage on
V
DD
pin relative to
V
SS
Voltage on
V
CC
pin relative to
V
SS
Voltage on
V
DDQ
pin relative to
V
SS
Voltage on
V
DDL
pin relative to
V
SS
Voltage on any pin relative to
V
SS
Voltage on
V
TT
pin relative to
V
SS
Storage Temperature
V
IN
,
V
OUT
V
DD
V
CC
V
DDQ
V
DDL
V
IN
,
V
OUT
V
TT
T
STG
–0.5
–0.5
–0,3
–0.5
–0.5
–0.3
–0.5
–55
+4.00
+2.4
+1.75
+2.3
+2.3
+1.75
+2.3
+100
V
V
V
V
V
V
V
°C
1)
1) Stresses greater than those listed under “Absolute Maximum Ratings“ may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2) When
V
DD
and
V
DDQ
and
V
DDL
are less than 500 mV;
V
REF
may be equal to or less than 300 mV.
3) Storage Temperature is the case surface temperature on the center/top side of the DRAM.
2)
2)3)
2)3)
2)
2)3)
Parameter
Symbol
Values
Unit Note
Min
Max
Junction Temperature
DRAM Component Case Temperature Range
AMB Component Case Temperature Range
T
J
T
CASE
0
0
0
115
95
111
°C
°C
°C
1)2)
1) Stresses greater than those listed under “Absolute Maximum Ratings“ may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2) Within the DRAM Component Case temperature range all DRAM specifications will be supported.
3)4)
1)2)
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