Internet Data Sheet
Rev. 1.0, 2006-12
11032006-VX0M-M6IH
4
HYS72T512341H[H/J/K]P-[3.7/5]-B
Registered DDR2 SDRAM Modules
1.2
Description
The Qimonda HYS72T512341H[H/J/K]P–[3.7/5]–B module
family are Very Low Profile Registered DIMM (with parity)
modules with 18,3 mm height based on DDR2 technology.
DIMMs are available as ECC modules in 512M
×
72 (4 GB)
organization and density, intended for mounting into 240-Ball
connector sockets.
The memory array is designed with 512-Mbit Double-Data-
Rate-Two (DDR2) Synchronous DRAMs. All control and
address signals are re-driven on the DIMM using register
devices and a PLL for the clock distribution. This reduces
capacitive loading to the system bus, but adds one cycle to
the SDRAM timing. Decoupling capacitors are mounted on
the PCB board. The DIMMs feature serial presence detect
based on a serial E
2
PROM device using the 2-ball I
2
C
protocol. The first 128 bytes are programmed with
configuration data and the second 128 bytes are available to
the customer.
TABLE 2
Ordering Information for RoHS Compliant Products
TABLE 3
Address Format
TABLE 4
Components on Modules
Product Type
1)
1) All Product Type numbers end with a place code, designating the silicon die revision. Example: HYS72T512341HJP-3.7-B, indicating Rev.
“B” dies are used for DDR2 SDRAM components. For all Qimonda DDR2 module and component nomenclature see
Chapter 6
of this data
sheet.
2) The Compliance Code is printed on the module label and describes the speed grade, for example “PC2–4200P–444–12”, where 4200P
means Registered DIMM modules (Parity bit) with 4.26 GB/sec Module Bandwidth and “444-12” means Column Address Strobe (CAS)
latency = 4, Row Column Delay (RCD) latency = 4 and Row Precharge (RP) latency = 4 using the latest JEDEC SPD Revision 1.2.
Compliance Code
2)
Description
SDRAM Technology
PC2–4200
HYS72T512341HHP–3.7–B
HYS72T512341HJP–3.7–B
HYS72T512341HKP–3.7–B
PC2–3200
HYS72T512341HHP–5–B
HYS72T512341HJP–5–B
HYS72T512341HKP–5–B
4 GB 4R
×
4 PC2–4200P–444–12–ZZ
4 GB 4R
×
4 PC2–4200P–444–12–ZZ
4 GB 4R
×
4 PC2–4200P–444–12–ZZ
4 Rank ECC
4 Rank ECC
4 Rank ECC
4 GB (
×
4)
4 GB (
×
4)
4 GB (
×
4)
4 GB 4R
×
4 PC2–3200P–333–12–ZZ
4 GB 4R
×
4 PC2–3200P–333–12–ZZ
4 GB 4R
×
4 PC2–3200P–333–12–ZZ
4 Rank ECC
4 Rank ECC
4 Rank ECC
4 GB (
×
4)
4 GB (
×
4)
4 GB (
×
4)
DIMM Density Module Organization
Memory Ranks
ECC/
Non-ECC
# of SDRAMs
# of row/bank/column bits
4 GB
512M
×
72
4
ECC
18
×
4
14/2/11
Product Type
DRAM Components
DRAM Density
DRAM Organisation
Note
HYS72T512341HHP
HYS72T512341HJP
HYS72T512341HKP
HYB18T2G401BHF
512 Mbit
512M
×
4
1)
1) For a detailed description of all functionalities of the DRAM components on these modules see the component data sheet.