參數(shù)資料
型號: HYS72T32000HP
廠商: QIMONDA
英文描述: 240-Pin Registered DDR2 SDRAM Modules
中文描述: 240針DDR2 SDRAM的注冊模塊
文件頁數(shù): 27/53頁
文件大小: 1264K
代理商: HYS72T32000HP
Internet Data Sheet
Rev. 1.01, 2006-09
03292006-ZZHP-PR83
27
HYS72T[32/64]xxxHP–[3S/3.7]–A
Registered DDR2 SDRAM Modules
TABLE 18
Timing Parameter by Speed Grade - DDR2-400
Parameter
Symbol
DDR2–400
Unit
Note
1)2)3)4)5)
6)7)
Min.
Max.
DQ output access time from CK / CK
CAS A to CAS B command period
CK, CK high-level width
CKE minimum high and low pulse width
CK, CK low-level width
Auto-Precharge write recovery + precharge
time
Minimum time clocks remain ON after CKE
asynchronously drops LOW
DQ and DM input hold time (differential data
strobe)
DQ and DM input hold time (single ended data
strobe)
DQ and DM input pulse width (each input)
DQS output access time from CK / CK
DQS input low (high) pulse width (write cycle)
DQS-DQ skew (for DQS & associated DQ
signals)
Write command to 1st DQS latching transition
DQ and DM input setup time (differential data
strobe)
DQ and DM input setup time (single ended
data strobe)
DQS falling edge hold time from CK (write
cycle)
DQS falling edge to CK setup time (write cycle)
t
DSS
Four Activate Window period
t
AC
t
CCD
t
CH
t
CKE
t
CL
t
DAL
–600
2
0.45
3
0.45
WR +
t
RP
+600
0.55
0.55
ps
t
CK
t
CK
t
CK
t
CK
t
CK
8)25)
t
DELAY
t
IS
+
t
CK
+
t
IH
––
ns
9)
t
DH
(base)
275
––
ps
10)
t
DH1
(base)
–25
ps
11)
t
DIPW
t
DQSCK
t
DQSL,H
t
DQSQ
0.35
–500
0.35
+
500
350
t
CK
ps
t
CK
ps
11)
t
DQSS
t
DS
(base)
– 0.25
150
+ 0.25
t
CK
ps
11)
t
DS1
(base)
–25
ps
11)
t
DSH
0.2
t
CK
0.2
37.5
50
MIN. (
t
CL,
t
CH
)
475
0.6
t
CK
ns
ns
t
FAW
13)
Clock half period
Data-out high-impedance time from CK / CK
Address and control input hold time
Address and control input pulse width
(each input)
Address and control input setup time
DQ low-impedance time from CK / CK
DQS low-impedance from CK / CK
Mode register set command cycle time
OCD drive mode output delay
Data output hold time from DQS
t
HP
t
HZ
t
IH
(base)
t
IPW
12)
t
AC.MAX
ps
ps
t
CK
13)
11)
t
IS
(base)
t
LZ(DQ)
t
LZ(DQS)
t
MRD
t
OIT
t
QH
350
2
×
t
AC.MIN
t
AC.MIN
2
0
t
HP
t
QHS
t
AC.MAX
t
AC.MAX
12
ps
ps
ps
t
CK
ns
11)
14)
14)
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