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參數(shù)資料
| 型號： | HYS72T1G242EP-25F-C |
| 廠商： | QIMONDA AG |
| 元件分類： | DRAM |
| 英文描述： | 240-Pin Dual Die Registered DDR2 SDRAM Modules |
| 中文描述： | 1G X 72 DDR DRAM MODULE, 0.6 ns, DMA240 |
| 封裝： | GREEN, RDIMM-240 |
| 文件頁數(shù)： | 20/43頁 |
| 文件大?。?/td> | 1309K |
| 代理商： | HYS72T1G242EP-25F-C |
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Internet Data Sheet
Rev. 1.0, 2007-07
07242007-LR08-OZC0
20
HYS72T1G242EP–[25F/2.5/3/3S/3.7]–C
Registerd DDR2 SDRAM Module
11) These parameters are specified per their average values, however it is understood that the relationship between the average timing and
the absolute instantaneous timing holds all the times (min. and max of SPEC values are to be used for calculations ).
12)
t
CKE.MIN
of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the valid input level the
entire time it takes to achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not transition from its valid level during
the time period of
t
IS
+ 2 x
t
CK
+
t
IH
.
13) DAL = WR + RU{
t
(ns) /
t
(ns)}, where RU stands for round up. WR refers to the tWR parameter stored in the MRS. For
t
, if the result
of the division is not already an integer, round up to the next highest integer.
t
refers to the application clock period. Example: For
DDR2–533 at
t
CK
= 3.75 ns with
t
WR
programmed to 4 clocks.
t
DAL
= 4 + (15 ns / 3.75 ns) clocks = 4 + (4) clocks = 8 clocks.
14)
t
DAL.nCK
= WR [nCK] +
t
nRP.nCK
= WR + RU{
t
RP
[ps] /
t
CK.AVG
[ps] }, where WR is the value programmed in the EMR.
15) Input waveform timing
t
with differential data strobe enabled MR[bit10] = 0, is referenced from the differential data strobe crosspoint to
the input signal crossing at the
V
level for a falling signal and from the differential data strobe crosspoint to the input signal crossing
at the
V
IL.DC
level for a rising signal applied to the device under test. DQS, DQS signals must be monotonic between
V
IL.DC.MAX
and
V
IH.DC.MIN
. See
Figure 3
.
16)
t
DQSQ
: Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as output
slew rate mismatch between DQS / DQS and associated DQ in any given cycle.
17) These parameters are measured from a data strobe signal ((L/U/R)DQS / DQS) crossing to its respective clock signal (CK / CK) crossing.
The spec values are not affected by the amount of clock jitter applied (i.e.
t
,
t
, etc.), as these are relative to the clock signal
crossing. That is, these parameters should be met whether clock jitter is present or not.
18) Input waveform timing
t
with differential data strobe enabled MR[bit10] = 0, is referenced from the input signal crossing at the
V
level
to the differential data strobe crosspoint for a rising signal, and from the input signal crossing at the
V
level to the differential data strobe
crosspoint for a falling signal applied to the device under test. DQS, DQS signals must be monotonic between
V
il(DC)MAX
and
V
ih(DC)MIN
. See
Figure 3
.
19) If
t
DS
or
t
DH
is violated, data corruption may occur and the data must be re-written with valid data before a valid READ can be executed.
20) These parameters are measured from a data signal ((L/U)DM, (L/U)DQ0, (L/U)DQ1, etc.) transition edge to its respective data strobe signal
((L/U/R)DQS / DQS) crossing.
21)
t
is the minimum of the absolute half period of the actual input clock.
t
is an input parameter but not an input specification parameter.
It is used in conjunction with t
QHS
to derive the DRAM output timing
t
QH
. The value to be used for
t
QH
calculation is determined by the
following equation;
t
= MIN (
,
t
), where,
t
CH.ABS
is the minimum of the actual instantaneous clock high time;
t
CL.ABS
is the
minimum of the actual instantaneous clock low time.
22)
t
and
t
transitions occur in the same access time as valid data transitions. These parameters are referenced to a specific voltage level
which specifies when the device output is no longer driving (
t
HZ
), or begins driving (
t
LZ
) .
23) Input waveform timing is referenced from the input signal crossing at the
V
IL.DC
level for a rising signal and
V
IH.DC
for a falling signal applied
to the device under test. See
Figure 4
.
24) Input waveform timing is referenced from the input signal crossing at the
V
IH.AC
level for a rising signal and
V
IL.AC
for a falling signal applied
to the device under test. See
Figure 4
.
25) These parameters are measured from a command/address signal (CKE, CS, RAS, CAS, WE, ODT, BA0, A0, A1, etc.) transition edge to
its respective clock signal (CK / CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e.
t
,
t
,
etc.), as the setup and hold are relative to the clock signal crossing that latches the command/address. That is, these parameters should
be met whether clock jitter is present or not.
26)
t
QH
=
t
HP
–
t
QHS
, where:
t
HP
is the minimum of the absolute half period of the actual input clock; and
t
QHS
is the specification value under
the max column. {The less half-pulse width distortion present, the larger the
t
value is; and the larger the valid data eye will be.}
Examples: 1) If the system provides
t
of 1315 ps into a DDR2–667 SDRAM, the DRAM provides
t
QH
of 975 ps minimum. 2) If the system
provides
t
HP
of 1420 ps into a DDR2–667 SDRAM, the DRAM provides
t
QH
of 1080 ps minimum.
27)
t
accounts for: 1) The pulse duration distortion of on-chip clock circuits, which represents how well the actual
t
at the input is
transferred to the output; and 2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the next
transition, both of which are independent of each other, due to data pin skew, output pattern effects, and pchannel to n-channel variation
of the output drivers.
28) The Auto-Refresh command interval has be reduced to 3.9
μ
s when operating the DDR2 DRAM in a temperature range between 85
°
C
and 95
°
C.
29) 0 °C
≤
T
CASE
≤
85
°
C
30) 85
°
C
<
T
CASE
≤
95
°
C
31) A maximum of eight Auto-Refresh commands can be posted to any given DDR2 SDRAM device.
32)
t
RPST
end point and
t
begin point are not referenced to a specific voltage level but specify when the device output is no longer driving
(
), or begins driving (
t
).
Figure 2
shows a method to calculate these points when the device is no longer driving (
t
), or begins
driving (
t
RPRE
) by measuring the signal at two different voltages. The actual voltage measurement points are not critical as long as the
calculation is consistent.
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| HYS72T1G242EP-3S-C | 240-Pin Dual Die Registered DDR2 SDRAM Modules |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HYS72T1G242EP-3.7-C | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:240-Pin Dual Die Registered DDR2 SDRAM Modules |
| HYS72T1G242EP-3-C | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:240-Pin Dual Die Registered DDR2 SDRAM Modules |
| HYS72T1G242EP-3S-C | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:240-Pin Dual Die Registered DDR2 SDRAM Modules |
| HYS72T256000ER | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:240-Pin Registered DDR2 SDRAM Modules |
| HYS72T256000ER-3.7-B | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:240-Pin Registered DDR2 SDRAM Modules |
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