參數(shù)資料
型號: HYS72D64300HU-5-B
廠商: INFINEON TECHNOLOGIES AG
英文描述: 184-Pin Unbuffered Dual-In-Line Memory Modules
中文描述: 184引腳緩沖雙列內(nèi)存模組
文件頁數(shù): 23/40頁
文件大小: 1374K
代理商: HYS72D64300HU-5-B
140
370
950
990
2300
51
2930
HYS[64/72]D[64300/128320][G/H]U–[5/6]–B
Unbuffered DDR SDRAM Modules
Electrical Characteristics
Data Sheet
23
Rev. 1.0, 2004-05
10042003-RYU3-RQON
[
Table 15
Product Type
I
DD
Specification for HYS[64/72]D[64/128][300/320]HU–6–B
H
512MB
H
H
512MB
H
H
1 GB
H
H
1 GB
H
Unit
Note
1)2)
1) DRAM component currents only
2) Test condition for maximum values:
V
DD
= 2.7 V,
T
A
= 10 °C
3) The module
I
DDx
values are calculated from the component
I
DDx
data sheet values as:
m
×
I
DDx
[component] +
n
×
I
DD3N
[component] with
m
and
n
number of components of rank 1 and 2;
n
=0 for 1 rank
modules
4) DQ I/O (
I
DDQ
) currents are not included into calculations: module
I
DD
values will be measured differently depending on
load conditions
5) The module
I
DDx
values are calculated from the corrponent
I
DDx
data sheet values as: (
m
+
n
)
×
I
DDx
[component]
Organization
×
64
×
72
×
64
×
72
1 Rank
1 Rank
2 Ranks
2 Ranks
–6
–6
–6
–6
Symbol
I
DD0
I
DD1
I
DD2P
I
DD2F
I
DD2Q
I
DD3P
I
DD3N
I
DD4R
I
DD4W
I
DD5
I
DD6
I
DD7
Typ.
720
760
20
200
140
90
280
680
720
1720
23
2200
Max.
840
920
30
240
190
120
330
840
880
2040
46
2600
Typ.
810
860
30
230
150
100
320
770
810
1940
26
2480
Max.
950
1040
40
270
220
Typ.
1000
1040
50
400
270
180
560
960
1000
2000
46
2480
Max.
1170
1250
60
480
380
240
660
1170
1210
2370
91
2930
Typ.
1130
1170
50
450
310
200
630
1080
1130
2250
52
2790
Max.
1310
1400
70
540
430
270
740
1310
1360
2660
103
3290
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
3)
3)4)
5)
5)
5)
5)
5)
3)4)
3)
3)
5)
3)4)
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