參數(shù)資料
型號(hào): HYM75V32M636T6-H
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144
封裝: SODIMM-144
文件頁(yè)數(shù): 6/13頁(yè)
文件大小: 179K
代理商: HYM75V32M636T6-H
PC133 SDRAM SO DIMM
Rev. 0.1/Apr. 02
2
HYM75V32M636(L)T6 Series
PIN DESCRIPTION
PIN
PIN NAME
DESCRIPTION
CK0, CK1
Clock Inputs
The system clock input. All other inputs are registered to the SDRAM on
the rising edge of CLK
CKE0, CKE1
Clock Enable
Controls internal clock signal and when deactivated, the SDRAM will be
one of the states among power down, suspend or self refresh
/S0
Chip Select
Enables or disables all inputs except CK, CKE and DQM
BA0, BA1
SDRAM Bank Address
Selects bank to be activated during /RAS activity
Selects bank to be read/written during /CAS activity
A0 ~ A12
Address
Row Address : RA0 ~ RA12, Column Address : CA0 ~ CA9
Auto-precharge flag : A10
/RAS, /CAS, /WE
Row Address Strobe, Column
Address Strobe, Write Enable
/RAS, /CAS and /WE define the operation
Refer function truth table for details
DQM0~DQM7
Data Input/Output Mask
Controls output buffers in read mode and masks input data in write mode
DQ0 ~ DQ63
Data Input/Output
Multiplexed data input / output pin
VCC
Power Supply (3.3V)
Power supply for internal circuits and input buffers
VSS
Ground
SCL
SPD Clock Input
Serial Presence Detect Clock input
SDA
SPD Data Input/Output
Serial Presence Detect Data input/output
SA0~2
SPD Address Input
Serial Presence Detect Address Input
WP
Write Protect for SPD
Write Protect for Serial Presence Detect on DIMM
NC
No Connection
No connection
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