參數(shù)資料
型號(hào): HYB5117405BT-50
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
中文描述: 4M X 4 EDO DRAM, 50 ns, PDSO24
文件頁(yè)數(shù): 18/28頁(yè)
文件大小: 323K
代理商: HYB5117405BT-50
Semiconductor Group
18
HYB5116(7)405BJ/BT-50/-60/-70
4M x 4-EDO DRAM
Hyper Page Mode (EDO) Late Write and Read-Modify Write Cycle
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相關(guān)PDF資料
PDF描述
HYB5116405BT-70 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB5116405BJBT-50- 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB5116405BT-60 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB5117405BT-60 RP12 (A) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 12V; 2:1 Wide Input Voltage Range; 12 Watts Output Power; 1.6kVDC Isolation; UL Certified; Over Current Protection; Five-Sided Shield; Standard DIP24 and SMD-Pinning; Efficiency to 88%
HYB5117405BT-70 POWERLINE: RP12-S_DA - 2:1 Wide Input Voltage Range- 12 Watts Output Power- 1.6kVDC Isolation- Over Current Protection- Five-Sided Continuous Shield- Standard DIP24 and SMD-Pinning- Efficiency to 88%
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