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參數(shù)資料
| 型號(hào)： | HYB314175BJ-50 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
| 中文描述： | 256K X 16 EDO DRAM, 50 ns, PDSO40 |
| 封裝： | 0.400 INCH, PLASTIC, SOJ-40 |
| 文件頁數(shù)： | 9/24頁 |
| 文件大?。?/td> | 1307K |
| 代理商： | HYB314175BJ-50 |
HYB 314175BJ/BJL-50/-55/-60
3.3V 256K x 16 EDO-DRAM
Semiconductor Group
9
Hyper Page Mode (EDO) Read-Modify-Write Cycle
Hyper page mode read/write cycle
time
t
PRWC
58
–
58
–
68
–
ns
CAS precharge to WE delay time
t
CPWD
41
–
41
–
49
–
ns
CAS before RAS Refresh Cycle
CAS setup time
t
CSR
t
CHR
t
RPC
t
WRP
t
WRH
5
–
5
–
5
–
ns
CAS hold time
10
–
10
–
10
–
ns
RAS to CAS precharge time
5
–
5
–
5
–
ns
Write to RAS precharge time
10
–
10
–
10
–
ns
Write to RAS hold time
10
–
10
–
10
–
ns
CAS-before-RAS Counter Test Cycle
CAS precharge time
t
CPT
35
–
35
–
40
–
ns
Self Refresh Cycle (L-Version only)
RAS pulse width
t
RASS
t
RPS
t
CHS
100
–
100
–
100
–
μ
s
ns
RAS precharge time
95
–
110
–
110
–
CAS hold time
– 50 –
– 50 –
– 50 –
ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-55
-60
min
max min
max min
max
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB314175BJL-50 | 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
| HYB314175BJL-55 | 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
| HYB314175BJL-60 | 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
| HYB 314400BJ-50 | 1M × 4-Bit Dynamic RAM(Fast Page Mode)(1M x 4位 動(dòng)態(tài) RAM(快速頁面模式)) |
| HYB314400BJ-50 | 1M x 4-Bit Dynamic RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB314175BJ-50- | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
| HYB314175BJ-55 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
| HYB314175BJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
| HYB314175BJL-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
| HYB314175BJL-55 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
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