- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385432 > HY64UD16322A-DF70E (Hynix Semiconductor Inc.) 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | HY64UD16322A-DF70E |
| 廠商： | Hynix Semiconductor Inc. |
| 元件分類： | DRAM |
| 英文描述： | 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| 中文描述： | 200萬× 16位低功耗1T/1C偽靜態(tài)存儲(chǔ)器 |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 269K |
| 代理商： | HY64UD16322A-DF70E |
HY64UD16322A Series
3
Revision 1.1
May. 2003
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied. Exposure
to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
Power
Standby
/CS1
H
X
X
L
L
L
L
L
L
L
L
L
CS2
H
L
H
H
H
H
H
H
H
H
H
H
/WE
X
X
X
L
H
H
L
H
H
L
H
H
/OE
X
X
X
X
L
H
X
L
H
X
L
H
/LB
X
X
H
L
L
L
H
H
H
L
L
L
/UB
X
X
H
H
H
H
L
L
L
L
L
L
Mode
Deselected
Deselected
Deselected
Write
Read
Output Disabled
Write
Read
Output Disabled
Write
Read
Output Disabled
I/O1~I/O8
High-Z
High-Z
High-Z
D
IN
D
OUT
High-Z
High-Z
High-Z
High-Z
D
IN
D
OUT
High-Z
I/O9~I/O16
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
D
IN
D
OUT
High-Z
D
IN
D
OUT
High-Z
I/O Pin
Deep Power Down
Standby
Active
Active
Active
Active
Active
Active
Active
Active
Active
Note
1. H=V
IH
, L=V
IL
, X=don’t care(V
IL
or V
IH
)
2. /UB, /LB(Upper, Lower Byte enable)
These active LOW inputs allow individual bytes to be written or read.
When /LB is LOW, data is written or read to the lower byte, I/O1 - I/O8.
When /UB is LOW, data is written or read to the upper byte, I/O9 - I/O16.
ORDERING INFORMATION
Part Number
HY64UD16322A-E
HY64UD16322A-I
Note
1. E : Extended Temp. (-25
°
C ~ 85
°
C)
2. I : Industrial Temp. (-40
°
C ~ 85
°
C)
Speed
70
70
Package
FBGA
FBGA
Power
LL-Part
LL-Part
Temperature
E
1
I
2
ABSOLUTE MAXIMUM RATINGS
1
Symbol
V
IN
V
OUT
Parameter
Rating
-0.3 to Vdd+0.3
-0.3 to Vddq+0.3
Remark
Input Voltage
Output Voltage
Unit
V
V
Vdd
Vddq
Core Power Supply
I/O Power Supply
-0.3 to 3.6
-0.3 to 3.6
V
V
T
A
Ambient Temperature
-25 to 85
-40 to 85
HY64UD16322A-E
HY64UD16322A-I
°
C
°
C
T
STG
P
D
T
SOLDER
Storage Temperature
Power Dissipation
Ball Soldering Temperature & Time
-55 to 150
1.0
26010
°
C
W
°
Csec
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY64UD16322A-DF70I | 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322A-E | 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322A-I | 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY86-12 | 90 Degree Hybrid 0.82-0.90 GHz |
| HY92-12 | 90 Degree Hybrid 0.88-0.96 GHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY64UD16322A-DF70I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322A-E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322A-I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322M-DF70E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。