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參數(shù)資料
| 型號： | HY62KF16403E |
| 英文描述： | x16|2.7~3.6V|55/70|Super Low Power Slow SRAM - 4M |
| 中文描述： | x16 | 2.7?3.6V的| 55/70 |超級低功耗SRAM的速度慢- 4分 |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 152K |
| 代理商： | HY62KF16403E |
HY62KF08401C Series
Rev.01 / Jun.01
4
AC CHARACTERISTICS
TA = -40
°C to 85°C, unless otherwise specified
55ns
70ns
#
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
1
tRC
Read Cycle Time
55
-
70
-
ns
2
tAA
Address Access Time
-
55
-
70
ns
3
tACS
Chip Select Access Time
-
55
-
70
ns
4
tOE
Output Enable to Output Valid
-
30
-
35
ns
5
tCLZ
Chip Select to Output in Low Z
10
-
10
-
ns
6
tOLZ
Output Enable to Output in Low Z
5
-
5
-
ns
7
tCHZ
Chip Deselection to Output in High Z
0
30
0
30
ns
8
tOHZ
Out Disable to Output in High Z
0
30
0
30
ns
9
tOH
Output Hold from Address Change
10
-
10
-
ns
10
tWC
Write Cycle Time
55
-
70
-
ns
11
tCW
Chip Selection to End of Write
50
-
60
-
ns
12
tAW
Address Valid to End of Write
50
-
60
-
ns
13
tAS
Address Set-up Time
0
-
0
-
ns
14
tWP
Write Pulse Width
45
-
50
-
ns
15
tWR
Write Recovery Time
0
-
0
-
ns
16
tWHZ
Write to Output in High Z
0
20
0
20
ns
17
tDW
Data to Write Time Overlap
25
-
30
-
ns
18
tDH
Data Hold from Write Time
0
-
0
-
ns
19
tOW
Output Active from End of Write
5
-
5
-
ns
AC TEST CONDITIONS
TA = -40
°C to 85°C, unless otherwise specified
Parameter
Value
Input Pulse Level
0.4V to 2.2V
Input Rise and Fall Time
5ns
Input and Output Timing Reference Level
1.5V
tCLZ, tOLZ, tCHZ, tOHZ, tWHZ, tOW
CL = 5pF + 1TTL Load
Output Load
Others
CL = 30pF + 1TTL Load
AC TEST LOADS
D
OUT
1728 Ohm
CL(1)
1029 Ohm
V
TM=2.8V
Note
1. Including jig and scope capacitance
READ CYCLE
WRITE CYCLE
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