參數(shù)資料
型號(hào): HY5S6B6DSF-SE
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 4Banks x1M x 16bits Synchronous DRAM
中文描述: 4M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
封裝: 0.80 MM PITCH, FBGA-54
文件頁(yè)數(shù): 17/27頁(yè)
文件大小: 368K
代理商: HY5S6B6DSF-SE
Rev 0.3 / July 2004
17
HY5S6B6D(L/S)F(P)-xE
4Banks x 1M x 16bits Synchronous DRAM
CKE Enable(CKE) Truth TABLE
(Sheet 1 of 2)
Current
State
CKE
Command
Action
Notes
Previous
Cycle
Current
Cycle
CS
RAS
CAS
WE
BA0,
BA1
A11-
A0
Self
Refresh
H
X
X
X
X
X
X
X
INVALID
1
L
H
H
X
X
X
X
X
Exit Self Refresh with
Device Deselect
2
L
H
L
H
H
H
X
X
Exit Self Refresh with
No Operation
2
L
H
L
H
H
L
X
X
ILLEGAL
2
L
H
L
H
L
X
X
X
ILLEGAL
2
L
H
L
L
X
X
X
X
ILLEGAL
2
L
L
X
X
X
X
X
X
Maintain Self Refresh
Power
Down
H
X
X
X
X
X
X
X
INVALID
1
L
H
H
X
X
X
X
X
Power Down mode exit,
all banks idle
2
L
H
H
H
X
X
L
H
L
L
X
X
X
X
ILLEGAL
2
X
L
X
X
X
X
X
L
X
X
L
L
X
X
X
X
X
X
Maintain Power Down Mode
Deep
Power
Down
H
X
X
X
X
X
X
X
INVALID
1
L
H
X
X
X
X
X
X
Deep Power
Down mode exit
5
L
L
X
X
X
X
X
X
Maintain Deep
Power Down Mode
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