參數(shù)資料
型號: HY5PS1G831F-E3
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 1Gb DDR2 SDRAM
中文描述: 128M X 8 DDR DRAM, 0.6 ns, PBGA68
封裝: FBGA-68
文件頁數(shù): 27/33頁
文件大?。?/td> 540K
代理商: HY5PS1G831F-E3
Rev. 1.2 / Dec 2006
27
1
HY5PS1G431(L)F
1
HY5PS1G831(L)F
Fig. -b Illustration of tangent line for tIS,tDS
CK, DQS
V
DDQ
V
IH
(ac)min
V
IH
(dc)min
V
REF
(dc)
V
IL
(dc)max
V
IL
(ac)max
Vss
Delta TF
Delta TR
V
REF
to ac
region
tangent
line
Tangent
line
t
IS
,
t
DS
CK, DQS
Nomial
line
nominal
line
Delta TR
Tangent line[V
IH
(ac)min-V
REF
(dc)]
Setup Slew Rate
Rising Signal
=
Tangent line[V
REF
(dc)-V
IL
(ac)max]
Delta TF
Setup Slew Rate
Falling Signal
=
t
IH
,
t
DH
t
IS
,
t
DS
t
IH
,
t
DH
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