參數(shù)資料
型號： HY5DU56822ELFP
廠商： Hynix Semiconductor Inc.
英文描述： 256Mb DDR SDRAM
中文描述： 256Mb的DDR SDRAM內(nèi)存
文件頁數(shù)： 17/29頁
文件大小： 260K
代理商： HY5DU56822ELFP
Rev. 1.1 / J une 2006
17
1
HY5DU56822E(L)FP
HY5DU561622E(L)FP
ABSOLUTE MAXIMUM RATINGS
Note:
Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITIONS
(TA=0 to 70
o
C, Voltage referenced to V
SS
= 0V)
Note:
1. VDDQ must not exceed the level of VDD.
2. VIL (min) is acceptable -1.5V AC pulse width with < 5ns of duration.
3. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of the same.
Peak to peak noise on VREF may not exceed
±
2% of the DC value.
4. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
5. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire temper-
ature and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the maximum dif-
ference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the maximum to minimum
pullup and pulldown current will not exceed 1/7 for device drain to source voltages from 0.1 to 1.0.
6. VIN=0 to VDD, All other pins are not tested under VIN =0V.
7. DQs are disabled, VOUT=0 to VDDQ
Parameter
Symbol
Rating
Unit
Operating Temperature (Ambient)
T
A
0 ~ 70
o
C
o
C
V
V
V
V
mA
Storage Temperature
Voltage on V
DD
relative to V
SS
Voltage on V
DDQ
relative to V
SS
Voltage on inputs relative to V
SS
Voltage on I/O pins relative to V
SS
Output Short Circuit Current
Soldering Temperature
Time
T
STG
V
DD
V
DDQ
V
INPUT
V
IO
IOS
T
SOLDER
-55 ~ 150
-1.0 ~ 3.6
-1.0 ~ 3.6
-1.0 ~ 3.6
-0.5 ~3.6
50
260
10
o
C
Sec
Parameter
Symbol
Min
Typ.
Max
Unit
Power Supply Voltage (DDR200, 266, 333)
Power Supply Voltage (DDR200, 266, 333)
1
Power Supply Voltage (DDR400)
Power Supply Voltage (DDR400)
1
Input High Voltage
Input Low Voltage
2
Termination Voltage
Reference Voltage
3
Input Voltage Level, CK and CK inputs
Input Differential Voltage, CK and CK inputs
4
V-I Matching: Pullup to Pulldown Current Ratio
5
Input Leakage Current
6
Output Leakage Current
7
Output High Current
(min VDDQ, min VREF, min VTT)
Output Low Current
(min VDDQ, max VREF, max VTT)
Output High Current
(min VDDQ, min VREF, min VTT)
Output Low Current
(min VDDQ, max VREF, max VTT)
V
DD
2.3
2.5
2.7
V
V
DDQ
2.3
2.5
2.7
V
V
DD
V
DDQ
2.4
2.4
2.6
2.6
2.7
2.7
V
V
V
IH
V
IL
V
REF
+ 0.15
-0.3
-
-
V
DDQ
+ 0.3
V
REF
- 0.15
V
V
V
TT
V
REF
VIN(DC)
VID(DC)
V
REF
- 0.04
0.49*VDDQ
-0.3
0.36
V
REF
V
REF
+ 0.04
0.51*VDDQ
VDDQ+0.3
VDDQ+0.6
V
V
V
V
0.5*VDDQ
-
-
VI(RATIO)
0.71
-
1.4
-
I
LI
-2
-
2
uA
I
LO
-5
-
5
uA
Normal Strength
Output Driver
(V
OUT
=VTT
±
0.84
)
IOH
-16.8
-
-
mA
IOL
16.8
-
-
mA
Half Strength
Output Driver
(V
OUT
=VTT
±
0.68
)
IOH
-13.6
-
-
mA
IOL
13.6
-
-
mA
相關(guān)PDF資料
PDF描述
HY5DU56822ELFP-D43 256Mb DDR SDRAM
HY5DU56822ELFP-H 256Mb DDR SDRAM
HY5DU56822ELFP-J 256Mb DDR SDRAM
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HY5DU56822ELFP-L 256Mb DDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY5DU56822ELFP-D43 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mb DDR SDRAM
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HY5DU56822ELFP-J 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mb DDR SDRAM
HY5DU56822ELFP-K 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mb DDR SDRAM
HY5DU56822ELFP-L 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mb DDR SDRAM
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