參數(shù)資料
型號： HY5DU56822EFP-H
廠商： Hynix Semiconductor Inc.
英文描述： 256Mb DDR SDRAM
中文描述： 256Mb的DDR SDRAM內(nèi)存
文件頁數(shù)： 18/29頁
文件大?。?/td> 260K
代理商： HY5DU56822EFP-H
Rev. 1.1 / J une 2006
18
1
HY5DU56822E(L)FP
HY5DU561622E(L)FP
IDD SPECIFICATION AND CONDITIONS
(TA=0 to 70
o
C, Voltage referenced to V
SS
= 0V)
Test Conditions
Test Condition
Symbol
Operating Current:
One bank; Active - Precharge; tRC=tRC(min); tCK=tCK(min); DQ,DM and DQS inputs changing twice per clock
cycle; address and control inputs changing once per clock cycle
Operating Current:
One bank; Active - Read - Precharge;
Burst Length=2; tRC=tRC(min); tCK=tCK(min); address and control inputs changing once per clock cycle
Precharge Power Down Standby Current:
All banks idle; Power down mode; CKE=Low, tCK=tCK(min)
Idle Standby Current:
/CS=High, All banks idle; tCK=tCK(min);
CKE=High; address and control inputs changing once per clock cycle.
VIN=VREF for DQ, DQS and DM
Idle Quiet Standby Current:
/CS>=Vih(min); All banks idle; CKE>=Vih(min); Addresses and other control inputs stable, Vin=Vref for DQ, DQS
and DM
Active Power Down Standby Current:
One bank active; Power down mode; CKE=Low, tCK=tCK(min)
Active Standby Current:
/CS=HIGH; CKE=HIGH; One bank; Active-Precharge; tRC=tRAS(max); tCK=tCK(min);
DQ, DM and DQS inputs changing twice per clock cycle; Address and other control inputs changing once per clock
cycle
Operating Current:
Burst=2; Reads; Continuous burst; One bank active; Address and control inputs changing once per clock cycle;
tCK=tCK(min); IOUT=0mA
Operating Current:
Burst=2; Writes; Continuous burst; One bank active; Address and control inputs changing once per clock cycle;
tCK=tCK(min); DQ, DM and DQS inputs changing twice per clock cycle
Auto Refresh Current:
tRC=tRFC(min) - 8*tCK for DDR200 at 100Mhz, 10*tCK for DDR266A & DDR266B at 133Mhz; distributed refresh
tRC=tRFC(min) - 14*tCK for DDR400 at 200Mhz
Self Refresh Current:
CKE =< 0.2V; External clock on; tCK=tCK(min)
Operating Current - Four Bank Operation:
Four bank interleaving with BL=4, Refer to the following page for detailed test condition
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
IDD7
相關(guān)PDF資料
PDF描述
HY5DU56822EFP-J 256Mb DDR SDRAM
HY5DU56822EFP-K 256Mb DDR SDRAM
HY5DU56822EFP-L 256Mb DDR SDRAM
HY5DU56822ELFP 256Mb DDR SDRAM
HY5DU56822ELFP-D43 256Mb DDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY5DU56822EFP-J 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mb DDR SDRAM
HY5DU56822EFP-K 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mb DDR SDRAM
HY5DU56822EFP-L 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mb DDR SDRAM
HY5DU56822ELFP 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mb DDR SDRAM
HY5DU56822ELFP-D43 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mb DDR SDRAM
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