參數(shù)資料
型號: HY5DS113222FM-28
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 512M(16Mx32) GDDR SDRAM
中文描述: 16M X 32 DDR DRAM, 0.6 ns, PBGA144
封裝: 12 X 12 MM, 0.80 MM PITCH, MO-205DAE, FBGA-144
文件頁數(shù): 6/30頁
文件大?。?/td> 431K
代理商: HY5DS113222FM-28
Rev. 0.1 / Oct. 2004
6
HY5DS113222FM(P)
FUNCTIONAL BLOCK DIAGRAM
(4Banks x 2Mbit x 32 I/O) x 2Chips Double Data Rate Synchronous DRAM
Bank
Control
Write Data Register
2-bit Prefetch Unit
Mode
Register
Row
Decoder
S
2Mx32/Bank0
2Mx32/Bank3
2Mx32/Bank2
2Mx32/Bank1
2
O
I
Data Strobe
Transmitter
DLL
Block
Column
Address
Counter
Column
Decoder
Data Strobe
Receiver
C
D
64
32
32
CLK, /CLK
64
DS
DQ[0:31]
DQS(0~3)
CLK_DLL
DS
Mode Register
A
B
CLK
CKE
DM(0~3)
/WE
/RAS
/CAS
CS1
/CLK
CLK
CKE
DM(0~3)
/WE
/RAS
/CAS
CS0
/CLK
BA0,BA1
A0~A11
BA0,BA1
A0~A11
相關(guān)PDF資料
PDF描述
HY5DS113222FM-33 512M(16Mx32) GDDR SDRAM
HY5DS113222FM-36 512M(16Mx32) GDDR SDRAM
HY5DS113222FM-4 512M(16Mx32) GDDR SDRAM
HY5DS113222FMP-28 512M(16Mx32) GDDR SDRAM
HY5DS113222FMP-33 512M(16Mx32) GDDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY5DS113222FM-33 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM
HY5DS113222FM-36 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM
HY5DS113222FM-4 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM
HY5DS113222FMP-28 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM
HY5DS113222FMP-33 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM