- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385424 > HY57V653220BTC-5 (HYNIX SEMICONDUCTOR INC) 4 Banks x 512K x 32Bit Synchronous DRAM PDF資料下載
參數(shù)資料
| 型號： | HY57V653220BTC-5 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 4 Banks x 512K x 32Bit Synchronous DRAM |
| 中文描述： | 2M X 32 SYNCHRONOUS DRAM, 4.5 ns, PDSO86 |
| 封裝： | 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 154K |
| 代理商： | HY57V653220BTC-5 |
Rev.1.6/Dec. 01
6
HY57V653220B
DC CHARACTERISTICS II
(DC operating conditions unless otherwise noted)
Note :
1.I
DD1
and I
DD4
depend on output loading and cycle rates. Specified values are measured with the output open
2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
Parameter
Symbol
Test Condition
Speed
Unit
Not
e
-5
-55
-6
-7
-8
-10P
-10
Operating Current
IDD1
Burst Length=1, One bank active
tRAS
≥
tRAS(min), tRP
≥
tRP(min),
IOL=0mA
200
190
180
170
150
150
150
mA
1
Precharge Standby
Current
in power down mode
IDD2P
CKE
≤
VIL(max), tCK = 15ns
2
mA
IDD2PS
CKE
≤
VIL(max), tCK =
∞
2
Precharge Standby
Current
in non power down mode
IDD2N
CKE
≥
VIH(min), CS
≥
VIH(min), tCK =
15ns
Input signals are changed one time during
2clks. All other pins
≥
VDD-0.2V or
≤
0.2V
15
mA
IDD2NS
CKE
≥
VIH(min), tCK =
∞
Input signals are stable.
10
Active Standby Current
in power down mode
IDD3P
CKE
≤
VIL(max), tCK = 15ns
3
mA
IDD3PS
CKE
≤
VIL(max), tCK =
∞
3
Active Standby Current
in non power down mode
IDD3N
CKE
≥
VIH(min), CS
≥
VIH(min), tCK =
15ns
Input signals are changed one time during
2clks. All other pins
≥
VDD-0.2V or
≤
0.2V
40
mA
IDD3NS
CKE
≥
VIH(min), tCK =
∞
Input signals are stable
25
Burst Mode Operating
Current
IDD4
tCK
≥
tCK(min),
tRAS
≥
tRAS(min), IOL=0mA
All banks active
CL=3
280
260
240
210
180
180
160
mA
1
CL=2
160
160
160
160
160
160
140
Auto Refresh Current
IDD5
tRRC
≥
tRRC(min), All banks active
250
235
220
210
190
190
190
mA
2
Self Refresh Current
IDD6
CKE
≤
0.2V
2
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY57V653220BTC-55 | 4 Banks x 512K x 32Bit Synchronous DRAM |
| HY57V653220BTC-6 | 4 Banks x 512K x 32Bit Synchronous DRAM |
| HY57V653220BTC-7 | 4 Banks x 512K x 32Bit Synchronous DRAM |
| HY57V653220BTC-8 | 4 Banks x 512K x 32Bit Synchronous DRAM |
| HY57V658010 | 8Mx8 bit Synchronous DRAM Series |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY57V653220BTC-55 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 512K x 32Bit Synchronous DRAM |
| HY57V653220BTC-6 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 512K x 32Bit Synchronous DRAM |
| HY57V653220BTC-6I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 SDRAM |
| HY57V653220BTC-7 | 制造商:Hyundai 功能描述:SDRAM, 2M x 32, 86 Pin, Plastic, TSSOP |
| HY57V653220BTC-7I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 SDRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。