型號: | HY57V641620HGLT-SI |
廠商: | HYNIX SEMICONDUCTOR INC |
元件分類: | DRAM |
英文描述: | CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN |
中文描述: | 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 |
封裝: | 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 |
文件頁數(shù): | 9/12頁 |
文件大?。?/td> | 145K |
代理商: | HY57V641620HGLT-SI |
相關PDF資料 |
PDF描述 |
---|---|
HY57V641620HGT-KI | 4 Banks x 1M x 16Bit Synchronous DRAM |
HY57V641620HGT-HI | 4 Banks x 1M x 16Bit Synchronous DRAM |
HY57V643220CT-47 | 4 Banks x 512K x 32Bit Synchronous DRAM |
HY57V643220CLT-47 | 4 Banks x 512K x 32Bit Synchronous DRAM |
HY57V643220CLT-P | 4 Banks x 512K x 32Bit Synchronous DRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
---|---|
HY57V641620HGT-5 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 1M x 16Bit Synchronous DRAM |
HY57V641620HGT-55 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 1M x 16Bit Synchronous DRAM |
HY57V641620HGT-55I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 1M x 16Bit Synchronous DRAM |
HY57V641620HGT-5I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 1M x 16Bit Synchronous DRAM |
HY57V641620HGT6 | 制造商:HYUNDAI 功能描述:* |