- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385422 > HY57V641620HGLT-PI (HYNIX SEMICONDUCTOR INC) Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance:+/- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes PDF資料下載
參數(shù)資料
| 型號： | HY57V641620HGLT-PI |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance:+/- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes |
| 中文描述： | 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 |
| 封裝： | 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 145K |
| 代理商： | HY57V641620HGLT-PI |
HY57V641620HG
Rev. 1.0/Jan. 02
4
ABSOLUTE MAXIMUM RATINGS
Note :
Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITION
(TA= -40 to 85
°
C
)
Note :
1.All voltages are referenced to V
SS
= 0V
2.VDD(min) of HY57V641620HG(L)T-5I/55I/6I is 3.135V
3.V
IH
(max) is acceptable 5.6V AC pulse width with
≤
3ns of duration
4.V
IL
(min) is acceptable -2.0V AC pulse width with
≤
3ns of duration
AC OPERATING CONDITION
(TA= -40 to 85
°
C
, V
DD
=3.3
±
0.3V
Note2
, V
SS
=0V)
Note :
1. Output load to measure access time is equivalent to two TTL gates and one capacitor (50pF)
For details, refer to AC/DC output circuit
2.VDD(min) of HY57V641620HG(L)T-5I/55I/6I is 3.135V
Parameter
Symbol
Rating
Unit
Ambient Temperature
T
A
-40 ~ 85
°
C
Storage Temperature
T
STG
-55 ~ 125
°
C
Voltage on Any Pin relative to V
SS
V
IN
, V
OUT
-1.0 ~ 4.6
V
Voltage on V
DD
relative to V
SS
V
DD,
V
DDQ
-1.0 ~ 4.6
V
Short Circuit Output Current
I
OS
50
mA
Power Dissipation
P
D
1
W
Soldering Temperature
Time
T
SOLDER
260
10
°
C
Sec
Parameter
Symbol
Min
Typ.
Max
Unit
Note
Power Supply Voltage
V
DD
, V
DDQ
3.0
3.3
3.6
V
1,2
Input High Voltage
V
IH
2.0
3.0
V
DDQ
+ 2.0
V
1,3
Input Low Voltage
V
IL
V
SSQ
- 2.0
0
0.8
V
1,4
Parameter
Symbol
Value
Unit
Note
AC Input High / Low Level Voltage
V
IH
/ V
IL
2.4/0.4
V
Input Timing Measurement Reference Level Voltage
Vtrip
1.4
V
Input Rise / Fall Time
tR / tF
1
ns
Output Timing Measurement Reference Level
Voutref
1.4
V
Output Load Capacitance for Access Time Measurement
CL
50
pF
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY57V641620HGLT-SI | CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN |
| HY57V641620HGT-KI | 4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V641620HGT-HI | 4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V643220CT-47 | 4 Banks x 512K x 32Bit Synchronous DRAM |
| HY57V643220CLT-47 | 4 Banks x 512K x 32Bit Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY57V641620HGLT-S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
| HY57V641620HGLT-SI | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V641620HGT-5 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V641620HGT-55 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V641620HGT-55I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 1M x 16Bit Synchronous DRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。