參數(shù)資料
型號: HY29LV320TF-90
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 32 Mbit (2M x 16) Low Voltage Flash Memory
中文描述: 2M X 16 FLASH 3V PROM, 90 ns, PBGA63
封裝: 7 X 11 MM, FBGA-63
文件頁數(shù): 40/44頁
文件大?。?/td> 323K
代理商: HY29LV320TF-90
40
r1.3/May 02
HY29LV320
AC CHARACTERISTICS
0x555 for Program
0x2AA for Erase
PA for Program
SA for Sector Erase
0x555 for Chip Erase
t
WS
t
RH
t
WH
CE#
OE#
Addresses
t
WC
VA
t
AS
t
AH
WE#
Data
RY/BY#
t
DS
Status
D
OUT
t
BUSY
t
WHWH1
or t
WHWH2
or t
WHWH3
t
DH
0xA0 for Program
0x55 for Erase
PD for Program
0x30 for Sector Erase
0x10 for Chip Erase
RESET#
t
CP
t
CPH
t
GHEL
Notes:
1.
PA = program address, PD = program data, VA = Valid Address for reading program or erase status (see Write
Operation Status section), D
OUT
= array data read at VA.
Illustration shows the last two cycles of the program or erase command sequence and the last status read cycle.
RESET# shown only to illustrate t
RH
measurement references. It cannot occur as shown during a valid command
sequence.
2.
3.
Figure 27. Alternate CE# Controlled Write Operation Timings
相關(guān)PDF資料
PDF描述
HY29LV320BF-12 Dust Cover; For Use With:Anderson Power SB350 Series Connectors; Color:Red
HY29LV320BF-12I 32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320TT-90 32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320BT-90 32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320TF-70 32 Mbit (2M x 16) Low Voltage Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY29LV320TF-90I 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320TT-12 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320TT-12I 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320TT-70 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320TT-70I 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory