參數(shù)資料
型號: HY29LV320BT-90
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 32 Mbit (2M x 16) Low Voltage Flash Memory
中文描述: 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝: TSOP-48
文件頁數(shù): 37/44頁
文件大?。?/td> 323K
代理商: HY29LV320BT-90
37
r1.3/May 02
HY29LV320
AC CHARACTERISTICS
Notes:
1. VA = Valid Address for reading Toggle Bits (DQ[2], DQ[6]) status data (see Write Operation Status section).
2. Illustration shows first two status read cycles after command sequence, last status read cycle and array data read cycle.
Figure 23. Toggle Bit Timings (During Automatic Algorithms)
t
OEPH
t
AST
t
BUSY
t
CH
t
OE
t
CE
t
RC
Valid Status
Valid Status
Valid Status
RY/BY#
DQ[6], [2]
WE#
OE#
CE#
Addresses
VA
VA
VA
t
ACC
t
OEH
t
OH
t
DF
VA
(second read)
(first read)
(stops toggling)
Valid Data
t
AHT
t
CEPH
t
BUSY
t
CH
t
OE
t
CE
t
RC
VA
Complement
Complement
True
Valid Data
Status Data
Status Data
Data
Valid Data
RY/BY#
DQ[6:0]
DQ[7]
WE#
OE#
CE#
Addresses
VA
VA
t
ACC
t
OEH
t
OH
t
DF
Notes:
1. VA = Valid Address for reading Data# Polling status data (see Write Operation Status section).
2. Illustration shows first status cycle after command sequence, last status read cycle and array data read cycle.
Figure 22. Data# Polling Timings (During Automatic Algorithms)
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HY29LV320TF-70 32 Mbit (2M x 16) Low Voltage Flash Memory
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HY29LV320BF-80I ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
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