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| 型號： | HY29F800ATT-90I |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| 中文描述： | 512K X 16 FLASH 5V PROM, 90 ns, PDSO48 |
| 封裝： | TSOP-48 |
| 文件頁數(shù)： | 34/40頁 |
| 文件大?。?/td> | 279K |
| 代理商： | HY29F800ATT-90I |
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34
Rev. 1.1/Feb 02
HY29F800A
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
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Notes:
1. Not 100% tested.
2. Typical program and erase times assume the following conditions: 25
°
C, V
= 5.0 volts, 100,000 cycles. In addition,
programming typicals assume a checkerboard pattern. Maximum program and erase times are under worst case condi-
tions of 90
°
C, V
= 4.5 volts (4.75 volts for 50 ns version), 100,000 cycles.
3. Excludes system-level overhead, which is the time required to execute the four-bus-cycle sequence for the program
command. See Table 5 for further information on command sequences.
4. Excludes 0x00 programming prior to erasure. In the preprogramming step of the Automatic Erase algorithm, all bytes are
programmed to 0x00 before erasure.
5. The typical chip programming time is considerably less than the maximum chip programming time listed since most bytes
program faster than the maximum programming times specified. The device sets DQ[5] = 1 only If the maximum byte
program time specified is exceeded. See Write Operation Status section for additional information.
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相關(guān)PDF資料 |
PDF描述 |
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| HY29F800ABG-90 | 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ABG-90I | 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| HY29F800BG-12 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8/x16 Flash EEPROM |
| HY29F800BG-12E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| HY29F800BG-12I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| HY29F800BG-55 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8/x16 Flash EEPROM |
| HY29F800BG-55E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
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