參數(shù)資料
型號(hào): HY29F800ATG-70
廠商: HYNIX SEMICONDUCTOR INC
元件分類(lèi): DRAM
英文描述: 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
中文描述: 512K X 16 FLASH 5V PROM, 70 ns, PDSO44
封裝: PLASTIC, SOP-44
文件頁(yè)數(shù): 4/40頁(yè)
文件大小: 279K
代理商: HY29F800ATG-70
4
Rev. 1.1/Feb 02
HY29F800A
SIGNAL DESCRIPTIONS
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MEMORY ARRAY ORGANIZATION
The 1 Mbyte Flash memory array is organized into
nineteen blocks called
sectors
(S0, S1, . . . , S18).
A sector is the smallest unit that can be erased
and which can be protected to prevent accidental
or unauthorized erasure. See the
Bus Operations
and
Command Definitions
sections of this docu-
ment for additional information on these functions.
In the HY29F800A, four of the sectors, which com-
prise the
boot block
, vary in size from 8 to 32
Kbytes (4 to 16 Kwords), while the remaining fif-
teen sectors are uniformly sized at 64 Kbytes (32
Kwords). The boot block can be located at the
bottom of the address range (HY29F800AB) or at
the top of the address range (HY29F800AT).
Table 1 defines the sector addresses and corre-
sponding address ranges for the top and bottom
boot block versions of the HY29F800A.
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HY29F800ATG-70I 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY29F800ATG-70I 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29F800ATG-90 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29F800ATG-90I 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29F800ATR-12 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29F800ATR-12I 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory