參數(shù)資料
型號(hào): HY29F800ATG-12
廠商: Hynix Semiconductor Inc.
英文描述: 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
中文描述: 8兆位(1Mx8/512Kx16),5伏只,閃存
文件頁(yè)數(shù): 29/40頁(yè)
文件大?。?/td> 279K
代理商: HY29F800ATG-12
29
Rev. 1.1/Feb 02
HY29F800A
AC CHARACTERISTICS
Notes:
1. SA =Sector Address (for sector erase), VA = Valid Address for reading status data (see Write Operation Status section),
D
is the true data at the read address.(0xFF after an erase operation).
2. Commands shown are for Word mode operation.
3. V
CC
shown only to illustrate t
VCS
measurement references. It cannot occur as shown during a valid command sequence.
Figure 18. Sector/Chip Erase Operation Timings
Addresses
CE#
t
WC
0x2AA
VA
VA
SA
OE#
t
AS
t
AH
t
WPH
t
WP
t
GHWL
t
CS
t
CH
WE#
Data
t
DS
t
DH
0x55
0x30
Status
D
OUT
t
WHWH2
or
t
WHWH3
RY/BY#
t
BUSY
t
RB
t
VCS
V
CC
Erase Command Sequence (last two cycles)
Read Status Data (last two cycles)
Address = 0x555
for chip erase
Data = 0x10
for chip erase
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HY29F800ATG-12I 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29F800ATG-55 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29F800ATG-55I 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29F800ATG-70 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29F800ATG-70I 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory