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參數(shù)資料
| 型號(hào)： | HY29F800ABR-12I |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| 中文描述： | 8兆位（1Mx8/512Kx16），5伏只，閃存 |
| 文件頁數(shù)： | 9/40頁 |
| 文件大?。?/td> | 279K |
| 代理商： | HY29F800ABR-12I |
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9
Rev. 1.1/Feb 02
HY29F800A
The flow chart in Figure 1 illustrates the proce-
dure for protecting sectors, and timing specifica-
tions and waveforms are shown in the specifica-
tions section of this document. Verification of pro-
tection is accomplished as described in the Elec-
tronic ID Mode section and shown in the flow chart.
The procedure for sector unprotection is illustrated
in the flow chart in Figure 2, and timing specifica-
tions and waveforms are given at the end of this
document.
Note that to unprotect any sector, all
unprotected sectors must first be protected prior
to the first unprotect write cycle.
Sectors can also be
temporarily
unprotected as
described in the next section.
Temporary Sector Unprotect Operation
This feature allows temporary unprotection of pre-
viously protected sectors to allow changing the
data in-system. Temporary Sector Unprotect mode
is activated by setting the RESET# pin to V
ID
. While
START
NOTE: All sectors must be
previously protected.
Set: TRYCNT = 1
Set: A9 = CE# = OE# = V
ID
Set: RESET# = V
IH
WE# = V
IL
Wait t
WPP2
Set:
A9 = V
OE# = CE# = V
IL
Read Data
Data = 0x00
NSEC = 18
YES
TRYCNT = 1000
NO
Increment TRYCNT
NO
YES
DEVICE FAILURE
NO
YES
Remove V
ID
from A9
SECTOR UNPROTECT
COMPLETE
APPLY V
CC
Set Sector Group Address:
A[18:12] = Sector NSEC
A0 = A6 = V
IL
A1 = V
IH
NSEC = NSEC + 1
Set: NSEC = 0
WE# = V
IH
Figure 2. Sector Unprotect Procedure
in this mode, formerly protected sectors can be
programmed or erased by invoking the appropri-
ate commands (see Device Commands section).
Once V
is removed from RESET#, all the previ-
ously protected sectors are protected again. Fig-
ure 3 illustrates the algorithm.
Electronic ID Mode Operation
The Electronic ID mode provides manufacturer and
device identification and sector protection verifi-
cation through identifier codes output on DQ[7:0]
or DQ[15:0]. This mode is intended primarily for
programming equipment to automatically match a
device to be programmed with its corresponding
programming algorithm. The Electronic ID infor-
mation can also be obtained by the host through a
command sequence, as described in the Device
Commands section.
Operation in the Electronic ID mode requires V
ID
on address pin A[9], with additional requirements
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY29F800ABR-55 | 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ABR-55I | 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ABR-70 | 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ABR-70I | 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ABR-90 | 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY29F800ABR-55 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ABR-55I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ABR-70 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ABR-70I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ABR-90 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
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