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參數(shù)資料
| 型號： | HY29F800 |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| 中文描述： | 8兆位（1Mx8/512Kx16），5伏只，閃存 |
| 文件頁數(shù)： | 20/40頁 |
| 文件大?。?/td> | 509K |
| 代理商： | HY29F800 |
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20
Rev. 4.2/May 01
HY29F800
ABSOLUTE MAXIMUM RATINGS
4
l
b
m
y
S
T
G
T
S
r
S
T
S
A
I
B
m
A
a
V
r
t
m
a
r
P
e
1
1
u
V
o
5
6
o
5
5
t
U
C
o
o
e
e
R
r
r
p
m
e
T
r
p
m
e
T
n
n
o
C
C
V
O
,
A
h
O
l
C
t
h
S
e
g
t
e
g
a
5
5
2
2
+
+
-
-
d
e
p
A
r
V
w
o
P
h
w
p
s
e
r
h
w
e
V
2
N
I
o
e
S
S
:
1
#
T
E
S
1
E
s
r
C
R
,
E
r
c
2
n
t
0
+
5
1
+
0
+
0
0
2
o
o
o
0
-
0
-
0
-
V
V
V
m
I
S
O
t
e
t
p
O
3
A
Notes:
1. Minimum DC voltage on input or I/O pins is
–
0.5 V. During voltage transitions, input or I/O pins may undershoot V
to
-2.0V for periods of up to 20 ns. See Figure 9. Maximum DC voltage on input or I/O pins is V
+ 0.5 V. During voltage
transitions, input or I/O pins may overshoot to V
+2.0 V for periods up to 20 ns. See Figure 10.
2. Minimum DC input voltage on pins A[9], OE#, and RESET# is -0.5 V. During voltage transitions, A[9], OE#, and RESET#
may undershoot V
to
–
2.0 V for periods of up to 20 ns. See Figure 9. Maximum DC input voltage on these pins is +12.5
V which may overshoot to 14.0 V for periods up to 20 ns.
3. No more than one output at a time may be shorted to V
. Duration of the short circuit should be less than one second.
4. Stresses above those listed under
“
Absolute Maximum Ratings
”
may cause permanent damage to the device. This is a
stress rating only; functional operation of the device at these or any other conditions above those indicated in the
operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for
extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
1
l
o
b
m
T
A
y
S
r
e
m
a
r
P
:
p
m
:
g
a
V
s
n
o
V
o
V
r
h
O
e
7
u
V
o
0
t
n
C
o
U
e
T
g
n
p
O
p
u
S
g
5
5
l
A
t
e
m
n
p
O
A
0
+
V
C
C
y
s
n
5
0
2
+
5
+
o
o
5
0
7
+
5
+
V
V
Notes:
1. Recommended Operating Conditions define those limits between which the functionality of the device is guaranteed.
2.0 V
V
CC
+ 0.5 V
V
CC
+ 2.0 V
20 ns
20 ns
20 ns
Figure 9. Maximum Undershoot Waveform
Figure 10. Maximum Overshoot Waveform
0.8 V
- 0.5 V
- 2.0 V
20 ns
20 ns
20 ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY29F800BG-70 | x8/x16 Flash EEPROM |
| HY29F800BG-90 | x8/x16 Flash EEPROM |
| HY29F800BR-12 | x8/x16 Flash EEPROM |
| HY29F800BR-55 | x8/x16 Flash EEPROM |
| HY29F800BR-70 | x8/x16 Flash EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY29F800A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ABG-12 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ABG-12I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ABG-55 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ABG-55I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
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