參數(shù)資料
型號: HY29F400TT-45
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: x8/x16 Flash EEPROM
中文描述: 256K X 16 FLASH 5V PROM, 45 ns, PDSO48
封裝: TSOP-48
文件頁數(shù): 26/40頁
文件大?。?/td> 509K
代理商: HY29F400TT-45
26
Rev. 5.2/May 01
HY29F400
AC CHARACTERISTICS
Word/Byte Configuration (BYTE#)
r
e
t
m
a
r
a
P
C
E
D
E
J
d
t
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L
F
L
E
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H
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L
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H
F
Y
B
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o
p
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s
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o
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0
7
O
-
5
5
d
e
5
e
5
p
-
S
t
U
5
4
-
0
9
-
w
h
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L
g
p
O
p
O
g
g
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o
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c
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S
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g
#
#
E
E
n
c
w
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c
w
S
T
T
Y
Y
B
B
o
o
E
E
#
#
T
T
E
E
x
x
x
a
a
a
n
M
M
M
M
s
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e
-
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A
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h
#
#
5
5
1
4
5
5
1
5
0
0
2
7
0
0
2
9
n
Data Output DQ[14:0]
Data Output DQ[7:0]
Data Output DQ[7:0]
Data Output DQ[14:0]
Output DQ[15]
Address Input A-1
Address Input A-1
Data Output DQ[15]
t
ELFL
t
ELFH
t
FHQV
t
FLQZ
CE#
OE#
BYTE#
DQ[14:0]
DQ[15]/A-1
BYTE#
DQ[14:0]
DQ[15]/A-1
BYTE#
switching
from word to
byte mode
BYTE#
switching
from byte to
word mode
Figure 15. BYTE# Timings for Read Operations
Figure 16. BYTE# Timings for Write Operations
t
SET
(t
AS
)
t
HOLD
(t
AH
)
Falling edge of the last WE# signal
CE#
WE#
BYTE#
Note:
Refer to the Program/Erase Operations table for t
AS
and t
AH
specifications.
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