參數(shù)資料
型號: HY27UF161G2M-VPIP
廠商: Hynix Semiconductor Inc.
英文描述: 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
中文描述: 1Gbit的(128Mx8bit / 64Mx16bit)NAND閃存
文件頁數(shù): 2/48頁
文件大?。?/td> 476K
代理商: HY27UF161G2M-VPIP
Rev 0.7 / Apr. 2005
2
Preliminary
HY27UF(08/ 16)1G2M Series
HY27SF(08/ 16)1G2M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Revision History
- Continued -
Revision
No.
History
Draft Date
Remark
0.5
1) Correct AC characteristics(tREH)
before: 30ns-> after: 20ns
2) Add Errata
Jan. 25. 2005
Preliminary
0.6
1) Change AC characteristics
2) Add tADL parameter
- tADL=100ns
3) Correct table.9
1) Correct AC Timing Characteristics Table
- Errata value is eddited.
- tADL(max) is changed to tADL(min).
2) Change Errata
- tREA is deleted from the errata
Case
Mar. 09. 2005
Preliminary
0.7
3) Edit pin Description table
4) Delete Multiple Die & Stacked Devices Access
- Texts & tables are deleted.
5) Edit Data Protection texts
6) Add Read ID table
7) Add tOH parameter
- tOH=15ns(min.)
8) Add Marking Information
9) Correct application note.2
- tCS(2us) is changed to 100ns.
Apr. 06. 2005
Preliminary
Case
tRC
tRP
tREH
tREA
Specification
Read(all)
50
20
20
30
Relaxed
value
Except for
ID Read
50
20
20
30
ID Read
60
25
30
30
tDH
Before
10
After
15
tRC
tRP
tREH
Before
Except for
ID Read
50
20
20
ID Read
60
25
30
After
Read (all)
60
25
30
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