參數(shù)資料
型號(hào): HY27UF161G2M-TPIB
廠商: HYNIX SEMICONDUCTOR INC
元件分類(lèi): DRAM
英文描述: 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
中文描述: 64M X 16 FLASH 3.3V PROM, 30 ns, PDSO48
封裝: 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48
文件頁(yè)數(shù): 34/48頁(yè)
文件大?。?/td> 476K
代理商: HY27UF161G2M-TPIB
Rev 0.7 / Apr. 2005
34
Preliminary
HY27UF(08/ 16)1G2M Series
HY27SF(08/ 16)1G2M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
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Figure 22: exit from cache read in 5ms when device internally is reading
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