型號: | HY27UF081G2M-TIS |
廠商: | HYNIX SEMICONDUCTOR INC |
元件分類: | DRAM |
英文描述: | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
中文描述: | 128M X 8 FLASH 3.3V PROM, 30 ns, PDSO48 |
封裝: | 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48 |
文件頁數: | 9/48頁 |
文件大小: | 476K |
代理商: | HY27UF081G2M-TIS |
相關PDF資料 |
PDF描述 |
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HY27UF081G2M-TMB | Inductor; Inductor Type:Power; Inductance:2uH; Inductance Tolerance: 25 %; Series:CTX; Package/Case:PCB Surface Mount; Core Material:Amorphous Metal; Current, lt rms Parallel:7.26A; Current, lt rms Series:3.63A RoHS Compliant: Yes |
HY27UF081G2M-TMP | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
HY27UF081G2M-TMS | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
HY27UF081G2M-TPCB | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
HY27UF081G2M-VPIB | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
相關代理商/技術參數 |
參數描述 |
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HY27UF081G2M-TMB | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
HY27UF081G2M-TMP | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
HY27UF081G2M-TMS | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
HY27UF081G2M-TPCB | 制造商:SK Hynix Inc 功能描述:IC FLASH NAND 1GB SMD TSOP48 制造商:SK Hynix Inc 功能描述:NAND Flash, 128M x 8, 48 Pin, Plastic, TSSOP |
HY27UF081G2M-TPCP | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |