參數(shù)資料
型號(hào): HY27UF081G2M-TIB
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
中文描述: 128M X 8 FLASH 3.3V PROM, 30 ns, PDSO48
封裝: 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48
文件頁(yè)數(shù): 10/48頁(yè)
文件大小: 476K
代理商: HY27UF081G2M-TIB
Rev 0.7 / Apr. 2005
10
Preliminary
HY27UF(08/ 16)1G2M Series
HY27SF(08/ 16)1G2M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
CLE
ALE
CE#
WE#
RE#
WP#
MODE
H
L
L
Rising
H
X
Read Mode
Command Input
L
H
L
Rising
H
X
Address Input(4 cycles)
H
L
L
Rising
H
H
Write Mode
Command Input
L
H
L
Rising
H
H
Address Input(4 cycles)
L
L
L
Rising
H
H
Data Input
L
L
L
(1)
H
Falling
X
Sequential Read and Data Output
L
L
L
H
H
X
During Read (Busy)
X
X
X
X
X
H
During Program (Busy)
X
X
X
X
X
H
During Erase (Busy)
X
X
X
X
X
L
Write Protect
X
X
H
X
X
0V/Vcc
Stand By
Table 6: Mode Selection
NOTE:
1. With the CE# don’t care option CE# high during latency time does not stop the read operation
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HY27UF081G2M-TIP 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TIS 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TMB 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TMP 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TMS 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory