參數(shù)資料
型號(hào)： HY27UF081G2M-T
廠商： Hynix Semiconductor Inc.
英文描述： 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
中文描述： 1Gbit的（128Mx8bit / 64Mx16bit）NAND閃存
文件頁(yè)數(shù)： 8/48頁(yè)
文件大?。?/td> 476K
代理商： HY27UF081G2M-T
Rev 0.7 / Apr. 2005
8
Preliminary
HY27UF(08/ 16)1G2M Series
HY27SF(08/ 16)1G2M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
1
.2 PIN DESCRIPTION
Pin Name
Description
IO0-IO7
IO8-IO15(1)
DATA INPUTS/ OUTPUTS
The IO pins allow to input command, address and data and to output data during read / program
operations. The inputs are latched on the rising edge of Write Enable (WE#). The I/O buffer float to
High-Z when the device is deselected or the outputs are disabled.
CLE
COMMAND LATCH ENABLE
This input activates the latching of the IO inputs inside the Command Register on the Rising edge of
Write Enable (WE#).
ALE
ADDRESS LATCH ENABLE
This input activates the latching of the IO inputs inside the Address Register on the Rising edge of
Write Enable (WE#).
CE#
CHIP ENABLE
This input controls the selection of the device. When the device is busy CE# low does not deselect
the memory.
WE#
WRITE ENABLE
This input acts as clock to latch Command, Address and Data. The IO inputs are latched on the rise
edge of WE#.
RE#
READ ENABLE
The RE# input is the serial data-out control, and when active drives the data onto the I/O bus. Data
is valid tREA after the falling edge of RE# which also increments the internal column address counter
by one.
WP#
WRITE PROTECT
The WP# pin, when Low, provides an Hardware protection against undesired modify (program /
erase) operations.
RB#
READY BUSY
The Ready/Busy output is an Open Drain pin that signals the state of the memory.
VCC
SUPPLY VOLTAGE
The VCC supplies the power for all the operations (Read, Write, Erase).
VSS
GROUND
NC
NOT CONNECTED
PRE
To Enable Power On Auto Read. When PRE is a logic high, Power on Auto Read mode is enabled, and
when PRE is a logic low, Power Auto Read mode is disabled. Power On Auto Read mode is available
only on 3.3V device.
Not using POWER-ON AUTO-READ, connect it Vss or leave it N.C.
Table 2: Pin Description
NOTE:
1. For x16 version only
2. A 0.1uF capacitor should be connected between the VCC Supply Voltage pin and the VSS Ground pin to decouple
the current surges from the power supply. The PCB track widths must be sufficient to carry the currents required
during program and erase operations.
相關(guān)PDF資料
PDF描述
HY27UF081G2M-TCB 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TCP 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY27UF081G2M-TCB 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TCP 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TCS 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TEB 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TEP 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
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