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參數(shù)資料
| 型號(hào)： | HY27SF081G2M-TIS |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| 中文描述： | 128M X 8 FLASH 1.8V PROM, 30 ns, PDSO48 |
| 封裝： | 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48 |
| 文件頁(yè)數(shù)： | 35/48頁(yè) |
| 文件大?。?/td> | 476K |
| 代理商： | HY27SF081G2M-TIS |
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Rev 0.7 / Apr. 2005
35
Preliminary
HY27UF(08/ 16)1G2M Series
HY27SF(08/ 16)1G2M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
System Interface Using CE don’t care
To simplify system interface, CE may be deasserted during data loading or sequential data-reading as shown below.
So, it is possible to connect NAND Flash to a microporcessor. The only function that was removed from standard NAND
Flash to make CE don’t care read operation was disabling of the automatic sequential read function.
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Figure 23: Program Operation with CE don’t-care.
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Figure 24: Read Operation with CE don’t-care.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY27SF081G2M-TMB | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SF081G2M-TMP | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SF081G2M-TMS | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SF081G2M-TPCB | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SF081G2M-TPCP | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY27SF081G2M-TMB | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SF081G2M-TMP | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SF081G2M-TMS | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SF081G2M-TPCB | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SF081G2M-TPCP | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
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